2N400 Todos los transistores

 

2N400 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N400

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 95 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.2 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO3

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2N400 datasheet

 0.1. Size:11K  semelab
 2n4000.pdf pdf_icon

2N400

2N4000 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

 0.2. Size:11K  semelab
 2n4001.pdf pdf_icon

2N400

2N4001 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

 0.3. Size:1047K  wietron
 2n4003k.pdf pdf_icon

2N400

2N4003K 3 DRAIN N-Channel Enhancement DRAIN CURRENT Mode Power MOSFET 1 0.5 AMPERES GATE P b Lead(Pb)-Free * DRAIN SOUCE VOLTAGE * Gate 30 VOLTAGE Pretection Features Diode SOURCE 2 * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. 3 * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V. 1 2

 0.4. Size:379K  willas
 2n4003nlt1.pdf pdf_icon

2N400

FM120-M WILLAS THRU 2N4003NLT1 Small Signal MOSFET 30V,0.56A, Single, SOT-23 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in ord

MOSTRAR MÁS

Otros transistores... 2N3996SM , 2N3997 , 2N3997SM , 2N3998 , 2N3998SM , 2N3999 , 2N3999SM , 2N40 , 13003 , 2N4000 , 2N4001 , 2N4002 , 2N4003 , 2N4004 , 2N4005 , 2N4006 , 2N4007 .

 

 

 

 

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