KSR1109 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSR1109
Código: R09
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 3.7 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT23
Búsqueda de reemplazo de KSR1109
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KSR1109 datasheet
ksr1109.pdf
KSR1109 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K ) Complement to KSR2109 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R09 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter
ksr1107.pdf
KSR1107 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =22K , R2=47K ) Complement to KSR2107 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R07 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted
ksr1105.pdf
KSR1105 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =4.7K , R2=10K ) Complement to KSR2105 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R05 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted
ksr1104.pdf
KSR1104 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =47K , R2=47K ) Complement to KSR2104 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R04 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted
Otros transistores... KSR1012, KSR1101, KSR1102, KSR1104, KSR1105, KSR1106, KSR1107, KSR1108, 2SC1815, KSR1110, KSR1111, KSR1112, KSR1113, KSR1114, KSR2001, KSR2002, KSR2003
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