KSR1113 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSR1113
Código: R13
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 3.7 pF
Ganancia de corriente contínua (hFE): 68
Encapsulados: SOT23
Búsqueda de reemplazo de KSR1113
- Selecciónⓘ de transistores por parámetros
KSR1113 datasheet
ksr1113.pdf
KSR1113 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =2.2K , R2=47K ) Complement to KSR2113 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R13 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted
ksr1114.pdf
KSR1114 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =4.7K , R2=47K ) Complement to KSR2114 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R14 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted
ksr1110.pdf
KSR1110 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to KSR2110 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R10 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter V
ksr1111.pdf
KSR1111 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K ) Complement to KSR2111 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R11 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter
Otros transistores... KSR1105, KSR1106, KSR1107, KSR1108, KSR1109, KSR1110, KSR1111, KSR1112, 2SA1837, KSR1114, KSR2001, KSR2002, KSR2003, KSR2004, KSR2005, KSR2006, KSR2007
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