KSR2002 Todos los transistores

 

KSR2002 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSR2002

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 5.5 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO92

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KSR2002 datasheet

 ..1. Size:42K  samsung
 ksr2002.pdf pdf_icon

KSR2002

KSR2002 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=10 ) Complement to KSR1002 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base

 8.1. Size:34K  fairchild semi
 ksr2005.pdf pdf_icon

KSR2002

KSR2005 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=10K ) Complement to KSR1005 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Va

 8.2. Size:42K  samsung
 ksr2008.pdf pdf_icon

KSR2002

KSR2008 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=22 ) Complement to KSR1008 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base

 8.3. Size:42K  samsung
 ksr2004.pdf pdf_icon

KSR2002

KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92 Built in bias Resistor (R1=47 , R2=47 ) Complement to KSR1004 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base V

MOSTRAR MÁS

Otros transistores... KSR1108, KSR1109, KSR1110, KSR1111, KSR1112, KSR1113, KSR1114, KSR2001, BD135, KSR2003, KSR2004, KSR2005, KSR2006, KSR2007, KSR2008, KSR2009, KSR2010

 

 

 

 

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