KSR2007 Todos los transistores

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KSR2007 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSR2007

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 200 MHz

Capacitancia de salida (Cc): 3.7 pF

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO236

Búsqueda de reemplazo de transistor bipolar KSR2007

 

KSR2007 Datasheet (PDF)

1.1. ksr2007.pdf Size:41K _samsung

KSR2007
KSR2007

KSR2007 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22 , R2=47 ) Complement to KSR1007 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage V

4.1. ksr2005.pdf Size:42K _samsung

KSR2007
KSR2007

KSR2205 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7 , R2=10 ) Complement to KSR1005 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage

4.2. ksr2002.pdf Size:42K _samsung

KSR2007
KSR2007

KSR2002 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=10 ) Complement to KSR1002 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage V

4.3. ksr2004.pdf Size:42K _samsung

KSR2007
KSR2007

KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92 Built in bias Resistor (R1=47 , R2=47 ) Complement to KSR1004 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VE

4.4. ksr2003.pdf Size:42K _samsung

KSR2007
KSR2007

KSR2003 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92 Built in bias Resistor (R1=22 , R2=22 ) Complement to KSR1003 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage V

4.5. ksr2006.pdf Size:42K _samsung

KSR2007
KSR2007

KSR2006 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=47 ) Complement to KSR1006 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage V

4.6. ksr2001.pdf Size:42K _samsung

KSR2007
KSR2007

KSR2001 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7 , R2=4.7 ) Complement to KSR1001 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage

4.7. ksr2008.pdf Size:42K _samsung

KSR2007
KSR2007

KSR2008 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=22 ) Complement to KSR1008 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage V

4.8. ksr2009.pdf Size:45K _samsung

KSR2007
KSR2007

KSR2009 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7 ) Complement to KSR1009 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V

Otros transistores... KSR1113 , KSR1114 , KSR2001 , KSR2002 , KSR2003 , KSR2004 , KSR2005 , KSR2006 , 5609 , KSR2008 , KSR2009 , KSR2010 , KSR2011 , KSR2011F , KSR2012 , KSR2012F , KSR2101 .

 


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Introduzca al menos 1 números o letras