KST3904 Todos los transistores

 

KST3904 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KST3904

Código: 1A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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KST3904 datasheet

 ..1. Size:55K  fairchild semi
 kst3904.pdf pdf_icon

KST3904

KST3904 3 General Purpose Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storage Temp

 8.1. Size:107K  fairchild semi
 kst3906.pdf pdf_icon

KST3904

September 2010 KST3906 PNP Epitaxial Silicon Transistor Features General Purpose Transistor 3 Marking 2 2A SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Collec

 8.2. Size:47K  samsung
 kst3906.pdf pdf_icon

KST3904

KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Emitter 3. Collector ELECTRI

 8.3. Size:47K  samsung
 kst3903.pdf pdf_icon

KST3904

KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -6 V Collector Current IC -200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Emitter 3. Collector EL

MOSTRAR MÁS

Otros transistores... KST20 , KST2222 , KST2222A , KST24 , KST2484 , KST2907 , KST2907A , KST3903 , D667 , KST4123 , KST4124 , KST4126 , KST42 , KST43 , KST4401 , KST4403 , KST5086 .

History: KT203VM | 2SD100A | 2SA1629 | BCY86

 

 

 

 

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