KST4123 Todos los transistores

 

KST4123 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KST4123
   Código: 5B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO236
 

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KST4123 Datasheet (PDF)

 ..1. Size:44K  fairchild semi
 kst4123.pdf pdf_icon

KST4123

KST4123General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temp

 8.1. Size:44K  fairchild semi
 kst4124.pdf pdf_icon

KST4123

KST4124General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temp

 8.2. Size:44K  fairchild semi
 kst4126.pdf pdf_icon

KST4123

KST4126General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -25 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -4 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage

 8.3. Size:45K  fairchild semi
 kst4125.pdf pdf_icon

KST4123

KST4125General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base Voltage -4 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage

MOSTRAR MÁS

Otros transistores... KST2222 , KST2222A , KST24 , KST2484 , KST2907 , KST2907A , KST3903 , KST3904 , BD777 , KST4124 , KST4126 , KST42 , KST43 , KST4401 , KST4403 , KST5086 , KST5087 .

History: 2SA813S3 | 2N331

 

 
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