KST4123 Todos los transistores

 

KST4123 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KST4123

Código: 5B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO236

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KST4123 datasheet

 ..1. Size:44K  fairchild semi
 kst4123.pdf pdf_icon

KST4123

KST4123 General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storage Temp

 8.1. Size:44K  fairchild semi
 kst4124.pdf pdf_icon

KST4123

KST4124 General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storage Temp

 8.2. Size:44K  fairchild semi
 kst4126.pdf pdf_icon

KST4123

KST4126 General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -4 V IC Collector Current -200 mA PC Collector Power Dissipation 350 mW TSTG Storage

 8.3. Size:45K  fairchild semi
 kst4125.pdf pdf_icon

KST4123

KST4125 General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -4 V IC Collector Current -200 mA PC Collector Power Dissipation 350 mW TSTG Storage

MOSTRAR MÁS

Otros transistores... KST2222 , KST2222A , KST24 , KST2484 , KST2907 , KST2907A , KST3903 , KST3904 , BD333 , KST4124 , KST4126 , KST42 , KST43 , KST4401 , KST4403 , KST5086 , KST5087 .

History: BCY86B | 2N3297 | KT203AM

 

 

 

 

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