KST4124 Todos los transistores

 

KST4124 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KST4124
   Código: ZC
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO236
 

 Búsqueda de reemplazo de KST4124

   - Selección ⓘ de transistores por parámetros

 

KST4124 Datasheet (PDF)

 ..1. Size:44K  fairchild semi
kst4124.pdf pdf_icon

KST4124

KST4124General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temp

 8.1. Size:44K  fairchild semi
kst4123.pdf pdf_icon

KST4124

KST4123General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temp

 8.2. Size:44K  fairchild semi
kst4126.pdf pdf_icon

KST4124

KST4126General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -25 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -4 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage

 8.3. Size:45K  fairchild semi
kst4125.pdf pdf_icon

KST4124

KST4125General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base Voltage -4 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC526 | 2SB1308R | BC183KB | KSA1150 | 2SC1580 | KTC5707L | KTC4520F

 

 
Back to Top

 


 
.