2N4007 Todos los transistores

 ..1. Size:114K  crystaloncs
 2n4006 2n4007 2n4008 2n4009 2n4010 2n4011.pdf

www.DataSheet.co.kr Datasheet pdf - http //www.DataSheet4U.net/

 9.1. Size:11K  semelab
 2n4000.pdf

2N4000 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

 9.2. Size:11K  semelab
 2n4001.pdf

2N4001 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

 9.3. Size:1047K  wietron
 2n4003k.pdf

2N4003K 3 DRAIN N-Channel Enhancement DRAIN CURRENT Mode Power MOSFET 1 0.5 AMPERES GATE P b Lead(Pb)-Free * DRAIN SOUCE VOLTAGE * Gate 30 VOLTAGE Pretection Features Diode SOURCE 2 * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. 3 * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V. 1 2

 9.4. Size:379K  willas
 2n4003nlt1.pdf

FM120-M WILLAS THRU 2N4003NLT1 Small Signal MOSFET 30V,0.56A, Single, SOT-23 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in ord