KTA1023 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L KTA1023 TRANSISTOR (PNP) 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (TaB=25 unless otherwise noted) Symbol Parameter Value UnitVB B Collector-Base Voltage -120 V CBOVB B Collector-Emitter Voltage -120 V CEOVB B Emitte

SEMICONDUCTOR KTA1023TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.B DFEATURE Complementary to KTC1027. DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBO -120 VCollector-Base Voltage H 0.55 MAXFF_J 14.00 + 0.50K

KTA1023 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTER 3. BASE 2 3 4.7001 5.100Features Complementary to KTC1027 7.8008.200MAXIMUM RATINGS (TB B=25 unless otherwise noted) A0.6000.800Symbol Parameter Value UnitsVB B Collector-Base Voltage -120 V CBO0.3500.550VB B Collector-Emitter Voltage -120 V CEO13.80014.200VB B Emitter-Base Vo

KTA1023WEITRONPNP TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASETO-92LMAXIMUM RATINGS (TA=25 unless otherwise noted)valueParameter Symbol UnitsCollector-Base Voltage VCBO -120 V-120 VCollector-Emitter Voltage VCEO-5 VEmitter-Base Voltage VEBO-0.8 ACollector Current -Continuous ICCollector Power Dissipation PC 0.9 WJunction Temperature TJ 150

KTA1023 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features KTC1027 Complementary pair with KTC1027. / Applications ,High voltage application. / Equivalent Circuit / Pinning 1 2 3 PIN1

SEMICONDUCTOR KTA1024TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.B DFEATURESHigh Voltage : VCEO=-150V.Low Output Capacitance : Cob=5.0pF(Max.).DIM MILLIMETERSPHigh Transition Frequency : fT=120MHz (Typ.).DEPTH:0.2A 7.20 MAXComplementary to KTC3206. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFF_

SEMICONDUCTOR KTA1021TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURES Excellent hFE Linearity.: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA DIM MILLIMETERSOA 3.20 MAX 1 Watt Amplifier Application. HM B 4.30 MAXC 0.55 MAX Complementary to KTC1020._D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60 MAXJ 1

KTA1024 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features High Voltage : VCEO=-150V. 7.8008.200 Low Output Capacitance : Cob=5.0pF(Max.). High Transition frequency : fT=120MHz (Typ.). 0.6000.800Complementary to KTC3206. 0.350MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.55013.80014.200Symbol Paramete

DIP Type TransistorsPNP TransistorsKTA1024TO-92LUnit:mm4.9 0.2 Features0.7 0.1 High Voltage and High fT Low Output Capacitance0.45 0.1 Comlementary to KTC320621 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150

DIP Type TransistorsPNP TransistorsKTA1021TO-92M Unit:mm6.0 0.2 Features Excellent hFE Linearity1.0 0.1 1 Watt Amplifier Application0.50 0.1 Complementary to KTC102021 31.50 3.0 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35