KTA1024 Todos los transistores

 ..1. Size:366K  kec
 kta1024.pdf

SEMICONDUCTOR KTA1024 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURES High Voltage VCEO=-150V. Low Output Capacitance Cob=5.0pF(Max.). DIM MILLIMETERS P High Transition Frequency fT=120MHz (Typ.). DEPTH 0.2 A 7.20 MAX Complementary to KTC3206. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF _

 ..2. Size:223K  lge
 kta1024.pdf

KTA1024 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features High Voltage VCEO=-150V. 7.800 8.200 Low Output Capacitance Cob=5.0pF(Max.). High Transition frequency fT=120MHz (Typ.). 0.600 0.800 Complementary to KTC3206. 0.350 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.550 13.800 14.200 Symbol Paramete

 ..3. Size:1386K  kexin
 kta1024.pdf

DIP Type Transistors PNP Transistors KTA1024 TO-92L Unit mm 4.9 0.2 Features 0.7 0.1 High Voltage and High fT Low Output Capacitance 0.45 0.1 Comlementary to KTC3206 2 1 3 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150

 8.1. Size:5180K  jiangsu
 kta1023.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L KTA1023 TRANSISTOR (PNP) 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (TaB=25 unless otherwise noted) Symbol Parameter Value Unit VB B Collector-Base Voltage -120 V CBO VB B Collector-Emitter Voltage -120 V CEO VB B Emitte

 8.2. Size:624K  kec
 kta1023.pdf

SEMICONDUCTOR KTA1023 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE Complementary to KTC1027. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO -120 V Collector-Base Voltage H 0.55 MAX FF _ J 14.00 + 0.50 K

 8.3. Size:73K  kec
 kta1021.pdf

SEMICONDUCTOR KTA1021 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES Excellent hFE Linearity. hFE(2)=25(Min.) at VCE=-6V, IC=-400mA DIM MILLIMETERS O A 3.20 MAX 1 Watt Amplifier Application. H M B 4.30 MAX C 0.55 MAX Complementary to KTC1020. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX J 1

 8.4. Size:232K  lge
 kta1023 to-92l.pdf

KTA1023 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTER 3. BASE 2 3 4.700 1 5.100 Features Complementary to KTC1027 7.800 8.200 MAXIMUM RATINGS (TB B=25 unless otherwise noted) A 0.600 0.800 Symbol Parameter Value Units VB B Collector-Base Voltage -120 V CBO 0.350 0.550 VB B Collector-Emitter Voltage -120 V CEO 13.800 14.200 VB B Emitter-Base Vo

 8.5. Size:58K  wietron
 kta1023.pdf

KTA1023 WEITRON PNP Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25 unless otherwise noted) value Parameter Symbol Units Collector-Base Voltage VCBO -120 V -120 V Collector-Emitter Voltage VCEO -5 V Emitter-Base Voltage VEBO -0.8 A Collector Current -Continuous IC Collector Power Dissipation PC 0.9 W Junction Temperature TJ 150

 8.6. Size:943K  blue-rocket-elect
 kta1023.pdf

 8.7. Size:1003K  kexin
 kta1021.pdf

DIP Type Transistors PNP Transistors KTA1021 TO-92M Unit mm 6.0 0.2 Features Excellent hFE Linearity 1.0 0.1 1 Watt Amplifier Application 0.50 0.1 Complementary to KTC1020 2 1 3 1.50 3.0 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35