KTB1370 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTB1370TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATIONS.POWER AMPLIFIER APPLICATIONS. ACDIM MILLIMETERSSFEATURES _A 10.0 + 0.3_+B 15.0 0.3EHigh Collector Current : IC=-7A.C _2.70 0.3+D 0.76+0.09/-0.05Low Collector-Emitter Saturation Voltage._E 3.2 0.2+: VCE(sat)=-0.5V(Max.) at IC=-4A. _F 3.0 0.3+

SEMICONDUCTOR KTB1368TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTD2060.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0.2

SEMICONDUCTOR KTB1366TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSSLow Collector Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.C _2.70 0.3+D 0.76+0.09/-0.05Collector Power Dissipation_E 3.2 0.2+: PC=25W (Tc=25 ) _F 3.0 0.3+_12.0 0.3G +Comple

SEMICONDUCTOR KTB1367TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURESDIM MILLIMETERSSLow Collector-Emitter Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=-2.0V(Max.).C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTD2059._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L

SEMICONDUCTOR KTB1369TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATIONACDRIVER STAGE APPLICATIONDIM MILLIMETERSSCOROR TV CLASS B SOUND OUTPUT APPLICATION_A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05FEATURES_E 3.2 0.2+High Breakdown Voltage : VCEO=-180V(Min.) _F 3.0 0.3+

isc Silicon PNP Power Transistor KTB1366DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type KTD2058Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

isc Silicon PNP Power Transistor KTB1367DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -2.0V(Max)@ (I = -4A, I = -0.4A)CE(sat) C BComplement to Type KTD2059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

isc Silicon PNP Power Transistor KTB1369DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -0.5A, I = -50mA)CE(sat) C BComplement to Type KTD2061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Voltage applicationTV, monitor verti