KTC3103B1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC3103B1
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 600 MHz
Ganancia de corriente contínua (hFE): 40
Búsqueda de reemplazo de KTC3103B1
- Selecciónⓘ de transistores por parámetros
KTC3103B1 datasheet
9.1. Size:557K mcc
ktc3199-bl-gr-o-y.pdf 
KTC3199-O MCC Micro Commercial Components TM KTC3199-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTC3199-GR Phone (818) 701-4933 Fax (818) 701-4939 KTC3199-BL Features High DC Current Gain hFE=70 700 NPN General Excellent hFE Linearity hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise NF=1.0dB(Typ.), 10dB(Max.) Purpose Application Compl
9.2. Size:244K secos
ktc3198.pdf
KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92 V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70 140 120 240 200 400 1Emitter Collector 2Base 3 3Collector Millimeter Millimeter 2 REF. REF.
9.3. Size:426K jiangsu
ktc3198.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 KTC3198 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching Application 3.BASE Complementary to KTA1266. Equivalent Circuit C 3198
9.4. Size:562K jiangsu
ktc3199.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S KTC3199 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High DC Current Gain 3. BASE Complementary to KTA1267 1 2 3 Equivalent Circuit C3199 C3199=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORM
9.5. Size:794K kec
ktc3198.pdf
SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(2)=100(Typ.) at VCE=6V, IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise NF=1dB(Typ.). at f=1kHz. Complementary to KTA1266. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base
9.6. Size:78K kec
ktc3199.pdf
SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES High DC Current Gain hFE=70 700. Excellent hFE Linearity DIM MILLIMETERS O A 3.20 MAX hFE(0.1mA)/hFE(2mA)=0.95(Typ.). H M B 4.30 MAX C 0.55 MAX Low Noise NF=1dB(Typ.), 10dB(Max.). _ D 2.40 + 0.15 E 1.27 Complementary to KTA1267. F 2.30
9.7. Size:94K kec
ktc3193.pdf
SEMICONDUCTOR KTC3193 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B FEATURE High Power Gain Gpe=30dB(Typ.) (f=10.7MHz). Recommended for FM IF, OSC Stage and AM CONV, IF Stage. DIM MILLIMETERS O A 3.20 MAX H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ MAXIMUM RATING (Ta=25 ) + G 14.00 0.50
9.8. Size:98K kec
ktc3197.pdf
SEMICONDUCTOR KTC3197 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES High Gain Gpe=33dB(Typ.) (f=45MHz). N DIM MILLIMETERS Good Linearity of hFE. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING
9.9. Size:75K kec
ktc3113.pdf
SEMICONDUCTOR KTC3113 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURE High DC Current Gain hFE=600 3600. Small Package. DIM MILLIMETERS O A 3.20 MAX H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 MAXIMUM RATING (Ta=25 ) F 2.30 C _ + G 14.00 0.50 CHARACTERISTIC SYMBOL RATING UNIT H 0.60 MAX J 1.05 VCBO
9.10. Size:114K kec
ktc3194.pdf
SEMICONDUCTOR KTC3194 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES Small Reverse Transfer Capacitance Cre=0.7pF(Typ.). N DIM MILLIMETERS Low Noise Figure NF=2.5dB(Typ.) (f=100MHz). A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 )
9.11. Size:84K kec
ktc3121.pdf
SEMICONDUCTOR KTC3121 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR TV TUNER, UHF OSCILLATOR APPLICATION. (COMMON BASE) TV TUNER, UHF CONVERTER APPLICATION. E L B L (COMMON BASE) DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 FEATURES C 1.30 MAX 2 High Transition Frequency fT=1500MHz (Typ.). 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Excellent hFE Linearity. 1 G 1.90
9.12. Size:114K kec
ktc3195.pdf
SEMICONDUCTOR KTC3195 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B FEATURES Small Reverse Transfer Capacitance Cre=0.7pF(Typ.). DIM MILLIMETERS O A 3.20 MAX Low Noise Figure NF=2.5dB(Typ.) (f=100MHz). H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60
9.13. Size:60K kec
ktc3199l.pdf
SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B High DC Current Gain hFE=70 700. Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS O A 3.20 MAX Low Noise NF=0.2dB(Typ.), 3dB(Max.). H M B 4.30 MAX C 0.55 MAX Complementary to KTA1267L. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ +
9.14. Size:66K kec
ktc3198a.pdf
SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=100(Typ.) at VCE=6V, IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS A 4.70 MAX Low Noise NF=1dB(Typ.). at f=1kHz. E K B 4.80 MAX G Complementary to KTA1266A. C 3.70 MAX D D 0.45 E
9.15. Size:75K kec
ktc3112.pdf
SEMICONDUCTOR KTC3112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURE High DC Current Gain hFE=600 3600. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 50 V H 0.45 _ H J 14.00 +
9.16. Size:72K kec
ktc3190.pdf
SEMICONDUCTOR KTC3190 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF BAND AMPLIFIER APPLICATION. B C FEATURE Low Noise Figure NF=3.5dB(Max.) (f=1MHz). N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.
9.17. Size:29K kec
ktc3198l.pdf
SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=100(Typ.) at VCE=6V, IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise NF=0.2dB(Typ.). f=(1kHz). A 4.70 MAX E K B 4.80 MAX Complementary to KTA1266L. (O,Y,GR class) G C 3.70 MAX D D 0.45 E 1.00 F 1.2
9.18. Size:91K kec
ktc3192.pdf
SEMICONDUCTOR KTC3192 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE High Power Gain Gpe=29dB(Typ.) (f=10.7MHz). N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 35 V H 0
9.19. Size:395K kec
ktc3114.pdf
SEMICONDUCTOR KTC3114 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B SWITCHING APPLICATION. D C E FEATURE F High DC Current Gain hFE=600 3600. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO Collector-Base Voltage 50 V _ + F 11.0 0.3 G 2.9 MAX
9.20. Size:190K lge
ktc3197.pdf
KTC3197(NPN) TO-92 Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High Gain Gpe=33dB(Typ) (f=45MHZ). Good linearity of hFE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in
9.21. Size:156K lge
ktc3195.pdf
KTC3195 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Cre=0.7pF(Typ) Low noise Figure NF=2.5dB(Typ.) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Cur
9.22. Size:387K lge
ktc3192.pdf
KTC3192(NPN) TO-92 Transistors TO-92 1. COLLECTOR 2. EMITTER 3. BASE Features High power gain Gpe=29dB(Typ)(f=10.7MHZ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches and (millim
9.23. Size:999K blue-rocket-elect
ktc3198.pdf
KTC3198 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h , , KTA1266 FE Excellent hFE linearity, low noise, complementary pair with KTA1266. / Applications General amplifier
9.24. Size:448K blue-rocket-elect
ktc3199m.pdf
KTC3199M(BR3DG3199M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , h , FE High DC current gain, excellent hFE linearity, low noise / Applications General amplifier
9.25. Size:1736K kexin
ktc3198.pdf
DIP Type Transistors NPN Transistors KTC3198 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise 0.60 Max Complementary to KTA1266 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 5
Otros transistores... KTC200, KTC2073, KTC2078, KTC2238, KTC2238A, KTC2347, KTC2553, KTC3103A1, 2N2222A, KTC3112, KTC3113, KTC3121, KTC3190, KTC3191, KTC3192, KTC3193, KTC3194
