KTC3191 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KTC3199-OMCCMicro Commercial ComponentsTMKTC3199-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTC3199-GRPhone: (818) 701-4933Fax: (818) 701-4939 KTC3199-BLFeatures High DC Current Gain: hFE=70~700NPN General Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.)Purpose Application Compl

KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92 V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70~140 120~240 200~400 1Emitter Collector 2Base 3 3Collector Millimeter Millimeter 2 REF. REF.

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 KTC3198 TRANSISTOR (NPN)1.EMITTERFEATURES 2.COLLECTOR General Purpose Switching Application3.BASE Complementary to KTA1266. Equivalent Circuit C 3198

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate TransistorsTO 92S KTC3199 TRANSISTOR (NPN)1. EMITTERFEATURES 2. COLLECTOR High DC Current Gain3. BASE Complementary to KTA1267123 Equivalent Circuit C3199C3199=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORM

SEMICONDUCTOR KTC3198TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTA1266. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base

SEMICONDUCTOR KTC3199TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATIONSWITCHING APPLICATION.BFEATURES High DC Current Gain : hFE=70~700. Excellent hFE LinearityDIM MILLIMETERSOA 3.20 MAX: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).HM B 4.30 MAXC 0.55 MAX Low Noise : NF=1dB(Typ.), 10dB(Max.)._D 2.40 + 0.15E 1.27 Complementary to KTA1267.F 2.30

SEMICONDUCTOR KTC3193TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.BFEATURE High Power Gain : Gpe=30dB(Typ.) (f=10.7MHz). Recommended for FM IF, OSC Stage and AM CONV, IF Stage.DIM MILLIMETERSOA 3.20 MAXHM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_MAXIMUM RATING (Ta=25 )+G 14.00 0.50

SEMICONDUCTOR KTC3197TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.B CFEATURES High Gain : Gpe=33dB(Typ.) (f=45MHz).N DIM MILLIMETERS Good Linearity of hFE.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTERISTIC SYMBOL RATING

SEMICONDUCTOR KTC3194TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION.B CFEATURES Small Reverse Transfer Capacitance: Cre=0.7pF(Typ.). N DIM MILLIMETERS Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )

SEMICONDUCTOR KTC3195TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION.BFEATURES Small Reverse Transfer Capacitance: Cre=0.7pF(Typ.). DIM MILLIMETERSOA 3.20 MAX Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60

SEMICONDUCTOR KTC3199LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AUDIO AMPLIFIER APPLICATION.FEATURES B High DC Current Gain : hFE=70 700. Excellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERSOA 3.20 MAX Low Noise : NF=0.2dB(Typ.), 3dB(Max.).HM B 4.30 MAXC 0.55 MAX Complementary to KTA1267L._D 2.40 + 0.15E 1.27F 2.30C_+

SEMICONDUCTOR KTC3198ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSA 4.70 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. EKB 4.80 MAXGComplementary to KTA1266A. C 3.70 MAXDD 0.45E

SEMICONDUCTOR KTC3190TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.HF BAND AMPLIFIER APPLICATION.B CFEATURE Low Noise Figure : NF=3.5dB(Max.) (f=1MHz).N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.

SEMICONDUCTOR KTC3198LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION.B CFEATURES Excellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise : NF=0.2dB(Typ.). f=(1kHz).A 4.70 MAXEKB 4.80 MAXComplementary to KTA1266L. (O,Y,GR class) GC 3.70 MAXDD 0.45E 1.00F 1.2

SEMICONDUCTOR KTC3192TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.B CFEATURE High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz).N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 35 VH 0

KTC3197(NPN)TO-92 Transistors 1.EMITTER TO-92 2. COLLECTOR 3. BASE Features High Gain: Gpe=33dB(Typ) (f=45MHZ). Good linearity of hFE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 4 VIC Collector Current -Continuous 50 mA Dimensions in

KTC3195TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Cre=0.7pF(Typ) Low noise Figure: NF=2.5dB(Typ.) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Cur

KTC3192(NPN)TO-92 TransistorsTO-92 1. COLLECTOR 2. EMITTER 3. BASE Features High power gain: Gpe=29dB(Typ)(f=10.7MHZ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches and (millim

KTC3198 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h ,, KTA1266 FEExcellent hFE linearity, low noise, complementary pair with KTA1266. / Applications General amplifier

KTC3199M(BR3DG3199M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , h , FEHigh DC current gain, excellent hFE linearity, low noise / Applications General amplifier

DIP Type TransistorsNPN TransistorsKTC3198Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise0.60 Max Complementary to KTA12660.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 5