KTC3229 Todos los transistores

 

KTC3229 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTC3229

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-emisor (Vce): 300 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO220F

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KTC3229 datasheet

 ..1. Size:441K  kec
ktc3229.pdf pdf_icon

KTC3229

SEMICONDUCTOR KTC3229 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR COLOR TV CHROMA OUTPUT APPLICATION. A C FEAUTRES DIM MILLIMETERS S High Voltage VCEO=300V. _ A 10.0 + 0.3 _ + B 15.0 0.3 E Small Collector Output Capacitance Cob=4.0pF(Max.). C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MA

 ..2. Size:210K  inchange semiconductor
ktc3229.pdf pdf_icon

KTC3229

isc Silicon NPN Power Transistor KTC3229 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 8.1. Size:77K  kec
ktc3227.pdf pdf_icon

KTC3229

SEMICONDUCTOR KTC3227 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. B D FEATURES Complementary to KTA1274. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO Collector-Base Voltage 80 V H 0.55 MAX FF _ J 14.00 + 0.50

 8.2. Size:79K  kec
ktc3226.pdf pdf_icon

KTC3229

SEMICONDUCTOR KTC3226 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APLICATION. B D FEATURES High DC Current Gain and Excellent hFE Linearity DIM MILLIMETERS P hFE(1)=140 600 (VCE=1V, IC=0.5A) DEPTH 0.2 A 7.20 MAX hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A). B 5.20 MAX C C 0.60 MAX S Low Saturation Voltage D 2.50 MAX Q E 1.15 MAX

Otros transistores... KTC3203 , KTC3204 , KTC3205 , KTC3206 , KTC3208 , KTC3226 , KTC3227 , KTC3228 , SS8050 , KTC3230 , KTC3231 , KTC3265 , KTC3295 , KTC3400 , KTC3467 , KTC3875 , KTC3876 .

 

 

 


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