KTC3878 Todos los transistores

 0.1. Size:73K  kec
 ktc3878s.pdf

SEMICONDUCTOR KTC3878S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF, VHF AMPLIFIER APPLICATION. E L B L FEATURE DIM MILLIMETERS Low Noise Figure NF=3.5dB(Max.) (f=1MHz). _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.0

 8.1. Size:640K  mcc
 ktc3876-gr-y.pdf

MCC Micro Commercial Components TM KTC3876-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTC3876-GR Phone (818) 701-4933 Fax (818) 701-4939 Features High hFE and Low Noise Epitaxial Planar Complementary to KTA1505 Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Transistors RoHS Compliant. See ordering information) Halo

 8.2. Size:785K  mcc
 ktc3875-gr-y.pdf

MCC Micro Commercial Components TM KTC3875-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTC3875-GR Phone (818) 701-4933 Fax (818) 701-4939 Features High hFE and Low Noise Epitaxial Planar Complementary to KTA1504 Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Transistors RoHS Compliant. See ordering information) Ha

 8.3. Size:53K  secos
 ktc3879.pdf

KTC3879 0.05A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A High Power Gain L 3 3 APPLICATIONS Top View C B 1 High Frequency Application 1 2 2 HF, VHF Band Amplifier Application K E D CLASSIFICATION OF hFE H J F G Product-Rank KTC3879-R KTC3879

 8.4. Size:590K  secos
 ktc3875.pdf

KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High hFE A L Low noise 3 3 Complementary to KTA1504 Top View C B 1 1 2 CLASSIFICATION OF hFE 2 K E Product-Rank KTC3875-O KTC3875-Y KTC3875-GR KTC3875-BL D Range 70 140 120 240 200 400 350

 8.5. Size:177K  secos
 ktc3876.pdf

KTC3876 0.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A High hFE L Complementary to KTA1505 3 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank KTC3876-O KTC3876-Y KTC3876-GR D Range 70 140 120 240 200 400 H J F G Marking Code WO W

 8.6. Size:777K  jiangsu
 ktc3875.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3875 TRANSISTOR (NPN) FEATURES High hFE 1. BASE Low noise 2. EMITTER 3. COLLECTOR Complementary to KTA1504 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50

 8.7. Size:86K  kec
 ktc3879s.pdf

SEMICONDUCTOR KTC3879S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E L B L FEATURE DIM MILLIMETERS High Power Gain Gpe=29dB(Typ.) (f=10.7MHz) _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CHA

 8.8. Size:385K  kec
 ktc3875s.pdf

SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 Excellent hFE Linearity B 1.30+0.20/-0.15 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 High hFE hFE=70 700. E 2.40+0.30/-0.20 1 G 1.90 Low Noise NF=1dB(Typ.), 10dB(Max.).

 8.9. Size:442K  kec
 ktc3876s.pdf

SEMICONDUCTOR KTC3876S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ + 2.93 0.20 A B 1.30+0.20/-0.15 hFE(2)=25(Min.) at VCE=6V, IC=400mA. C 1.30 MAX 2 Complementary to KTA1505S. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00

 8.10. Size:479K  htsemi
 ktc3879.pdf

KTC3879 TRANSISTOR (NPN) SOT 23 FEATURES High Power Gain APPLICATIONS High Frequency Application HF,VHF Band Amplifier Application 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 35 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 4 V EBO I Col

 8.11. Size:781K  htsemi
 ktc3875.pdf

KTC3875 TRANSISTOR (NPN) SOT-23 FEATURES High hFE Low noise 1. BASE Complementary to KTA1504 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissip

 8.12. Size:736K  htsemi
 ktc3876.pdf

KTC3876 SOT-23 TRANSISTOR (NPN) FEATURES High hFE 1. BASE Complementary to KTA1505 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW

 8.13. Size:188K  lge
 ktc3875.pdf

KTC3875 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High hFE hFE=70-700 Low noise NF=1dB(Typ),10dB(Max) Complementary to KTA1504 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base V

 8.14. Size:208K  lge
 ktc3876.pdf

KTC3876 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High hFE hFE=70-400 Complementary to KTA1505 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Contin

 8.15. Size:476K  wietron
 ktc3875.pdf

KTC3875 COLLECTOR Plastic-Encapsulate Transistors 3 NPN Silicon 1 BASE 2 SOT-23 EMITTER (Ta=25 C) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO 50 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -Continuous IC mAdc 150 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit (1) Total Device Dissi

 8.16. Size:64K  wietron
 ktc3876.pdf

KTC3876 Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 1 BASE 2 SOT-23 EMITTER (Ta=25 C) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO 30 Vdc Collector-Base Voltage VCBO 35 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -Continuous IC mAdc 500 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Total Device Dissipatio

 8.17. Size:235K  shenzhen
 ktc3875.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3875 TRANSISTOR (NPN) FEATURES High hFE 1. BASE 2. EMITTER Low noise 3. COLLECTOR Complementary to KTA1504 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEB

 8.18. Size:1062K  blue-rocket-elect
 ktc3875.pdf

 8.19. Size:265K  china
 ktc3875lt1.pdf

SEMICONDUCTOR KTC3875LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR General purpose application Package SOT-23 * Complement to KTA1504LT1 * Collector Current Ic=150mA * low noise NF=10db(max) ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage

 8.20. Size:996K  kexin
 ktc3875.pdf

SMD Type Transistors NPN Transistors KTC3875 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High hFE Low noise 1 2 +0.1 +0.05 Complementary to KTA1504 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage V

 8.21. Size:338K  kexin
 ktc3876.pdf

SMD Type Transistors NPN Transistors KTC3876 (KTC3876S) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE Linearity Complementary to KTA1505/KTA1505S 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collecto

 8.22. Size:566K  cn shikues
 ktc3875s-o ktc3875s-q ktc3875s-g ktc3875s-l.pdf

KTC3875S NPN Silicon Epitaxial Planar Transistor For switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. 1.Base 2.Emitter 3.Collector O SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter

 8.23. Size:432K  cn hottech
 ktc3875.pdf

KTC3875 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to KTA1504 High h FE Low Noise Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Ba