KTD1003A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTD1003A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 800
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar KTD1003A
KTD1003A Datasheet (PDF)
ktd1003.pdf
SEMICONDUCTOR KTD1003TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. A CFEATURESGH High DC Current GainLM: hFE=800 3200. (VCE=5.0V, IC=300mA). Wide Area of Safe Operation.N Low Collector Saturation VoltageD D: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).KDIM MILLIMETERSF FA 4.70 MAX_+B 2.50 0.20C 1.70 MAXD 0.45+0.15/-0.101
ktd1047.pdf
SEMICONDUCTOR KTD1047TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURES Complementary to KTB817. Recommended for 60W Audio Frequency DIM MILLIMETERSAmplifier Output Stage.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RATIN
ktd1047b.pdf
SEMICONDUCTOR KTD1047BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION. AFEATURES Q BNO KComplementary to KTB817B.DIM MILLIMETERSRecommended for 60W Audio Frequency _A +15.60 0.20_B4.80 + 0.20Amplifier Output Stage._C 19.90 + 0.20_D 2.00 0.20+_d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20_G 3.50 + 0.20D _
ktd1028.pdf
SEMICONDUCTOR KTD1028TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURESHigh DC Current Gain: hFE=800 3200 (VCE=5.0V, IC=300mA).Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 60 VVCEOCollector-Emitter Vo
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050