KTD1413 Todos los transistores

 ..1. Size:444K  kec
 ktd1413.pdf

SEMICONDUCTOR KTD1413 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain hFE=2000(Min.) at VCE=2V, IC=3A. _ E 3.2 0.2 + Low Saturation Voltage VCE(sat)=1.5V(Max.) at IC

 8.1. Size:455K  kec
 ktd1415.pdf

SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain hFE=2000(Min.) at VCE=3V, IC=3A. _ E 3.2 0.2 + Low Saturation Voltage VCE(sat)=1.5V(Max.) at IC

 8.2. Size:455K  kec
 ktd1415v.pdf

SEMICONDUCTOR KTD1415V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR INDUSTRIAL USE. HIGH POWER SWITCHING APPLICATIONS. A C HAMMER DRIVER, PULSE MOTOR DRIVER DIM MILLIMETERS S APPLICATIONS. _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 FEATURES _ E 3.2 0.2 + High DC Current Gain hFE=2000(Min.) at VCE=3V, IC=3A. _ F 3.0 0.3 + _ 12.0 0.3 G +

 8.3. Size:449K  kec
 ktd1414.pdf

SEMICONDUCTOR KTD1414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 E FEATURES C _ 2.70 0.3 + D 0.76+0.09/-0.05 High DC Current Gain hFE=2000(Min.) at VCE=2V, IC=1A. _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 1

 8.4. Size:384K  kec
 ktd1411.pdf

SEMICONDUCTOR KTD1411 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A B D C FEATURES E High DC Current Gain hFE=3000(Min.) F (VCE=2V, IC=1A) G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO Collector-Base Voltage 80 V _ + F 11.0 0.3 G 2.9

 8.5. Size:212K  inchange semiconductor
 ktd1414.pdf

isc Silicon NPN Darlington Power Transistor KTD1414 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applicati