KTD2060 Datasheet. Equivalente

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 ktd2060.pdf

SEMICONDUCTOR KTD2060 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Good Linearity of hFE. _ A 10.0 0.3 + _ + B 15.0 0.3 E Complementary to KTB1368. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (Ta=25 ) R K _ 3.7 0.

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 ktd2061.pdf

SEMICONDUCTOR KTD2061 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION A C DRIVER STAGE APPLICATION DIM MILLIMETERS S COROR TV CLASS B SOUND OUTPUT APPLICATION _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 FEATURES _ E 3.2 0.2 + High Breakdown Voltage VCEO=180V(Min.) _ F 3.0 0.3 +

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 ktd2066.pdf

SEMICONDUCTOR KTD2066 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER APPLICATION. A C DIM MILLIMETERS S FEATURES _ A 10.0 0.3 + _ + B 15.0 0.3 E High DC Current Gain C _ 2.70 0.3 + D 0.76+0.09/-0.05 hFE=500 1500(IC=1A). _ E 3.2 0.2 + Low Collector Saturation Voltage _ F 3.0 0.3 + _ 12.0 0.3 G + VCE(sa

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 ktd2061.pdf

isc Silicon NPN Power Transistor KTD2061 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max)@ (I = 0.5A, I = 50mA) CE(sat) C B Complement to Type KTB1369 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Voltage application TV, monitor vertical