KTD2060 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTD2060TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 0.3+_+B 15.0 0.3EComplementary to KTB1368.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0.

SEMICONDUCTOR KTD2061TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATIONACDRIVER STAGE APPLICATIONDIM MILLIMETERSSCOROR TV CLASS B SOUND OUTPUT APPLICATION_A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05FEATURES_E 3.2 0.2+High Breakdown Voltage : VCEO=180V(Min.) _F 3.0 0.3+

SEMICONDUCTOR KTD2066TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.LAMP SOLENOID DRIVER APPLICATION.ACDIM MILLIMETERSSFEATURES_A 10.0 0.3+_+B 15.0 0.3EHigh DC Current Gain C _2.70 0.3+D 0.76+0.09/-0.05: hFE=500 1500(IC=1A)._E 3.2 0.2+Low Collector Saturation Voltage _F 3.0 0.3+_12.0 0.3G +: VCE(sa

isc Silicon NPN Power Transistor KTD2061DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max)@ (I = 0.5A, I = 50mA)CE(sat) C BComplement to Type KTB1369Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Voltage applicationTV, monitor vertical