KTD2061 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTD2061
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-emisor (Vce): 180 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar KTD2061
KTD2061 Datasheet (PDF)
ktd2061.pdf
SEMICONDUCTOR KTD2061TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATIONACDRIVER STAGE APPLICATIONDIM MILLIMETERSSCOROR TV CLASS B SOUND OUTPUT APPLICATION_A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05FEATURES_E 3.2 0.2+High Breakdown Voltage : VCEO=180V(Min.) _F 3.0 0.3+
ktd2061.pdf
isc Silicon NPN Power Transistor KTD2061DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max)@ (I = 0.5A, I = 50mA)CE(sat) C BComplement to Type KTB1369Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Voltage applicationTV, monitor vertical
ktd2060.pdf
SEMICONDUCTOR KTD2060TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 0.3+_+B 15.0 0.3EComplementary to KTB1368.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0.
ktd2066.pdf
SEMICONDUCTOR KTD2066TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.LAMP SOLENOID DRIVER APPLICATION.ACDIM MILLIMETERSSFEATURES_A 10.0 0.3+_+B 15.0 0.3EHigh DC Current Gain C _2.70 0.3+D 0.76+0.09/-0.05: hFE=500 1500(IC=1A)._E 3.2 0.2+Low Collector Saturation Voltage _F 3.0 0.3+_12.0 0.3G +: VCE(sa
ktd2058.pdf
SEMICONDUCTOR KTD2058TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSSLow Saturation Voltage_A 10.0 0.3+_+B 15.0 0.3E: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTB1366._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5
ktd2059.pdf
SEMICONDUCTOR KTD2059TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURESDIM MILLIMETERSSComplementary to KTB1367._A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +MAXIMUM RATING (Ta=25 )H 0.5+0.1/-0.05_+J 13.6 0.5L LCHARACTERISTIC SYMBOL RATING UNITR
ktd2092.pdf
SEMICONDUCTOR KTD2092TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.ACDIM MILLIMETERSSFEATURES_A 10.0 0.3+_+B 15.0 0.3EHigh hFE : hFE=500 1500 (IC=0.5A).C _2.70 0.3+D 0.76+0.09/-0.05Low Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A)._E 3.2 0.2+_F 3.0 0.3+_12.0 0.
ktd2058.pdf
KTD2058(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOTR 3. EMITTER 3 21Features Low Collector Saturation Voltage : VCE(SAT) = 1. 0V(MAX) . Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V
ktd2017.pdf
SMD Type ICSMD Type ICN-Channel Silicon MOSFETKTD2017TSSOP-8Unit: mmFeaturesLow ON resistance.2.5V drive.Mounting height 1.1mmComposite type, facilitating high-density mounting.5: Gate21: Drain16 : Source22 : Source17 : Source23 : Source18: Drain24: Gate1Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-to-Source Voltage VDSS 20 VGate-
ktd2005.pdf
SMD Type ICSMD Type ICUltrahigh-Speed Switching ApplicationsKTD2005TSSOP-8Unit: mmFeaturesLow ON resistance.2.5V drive.Mounting height 1.1mm.Composite type, facilitating high-density mounting.5: Gate21: Drain16 : Source22 : Source17 : Source23 : Source18: Drain24: Gate1Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-to-Source Voltage V
ktd2058.pdf
isc Silicon NPN Power Transistor KTD2058DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOCollector Power Dissipation: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type KTB1366Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO
ktd2059.pdf
isc Silicon NPN Power Transistor KTD2059DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 2.0V(Max)@ (I = 4A, I = 0.4A)CE(sat) C BComplement to Type KTB1367Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .