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KTN2222 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KTN2222
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar KTN2222

 

KTN2222 Datasheet (PDF)

 ..1. Size:405K  kec
 ktn2222 a.pdf

KTN2222 KTN2222

SEMICONDUCTOR KTN2222/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.N DIM MILLIMETERSLow Saturation Voltage A 4.70 MAXEKB 4.80 MAX: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. GC 3.70 MAXDComplementary to the KTN2907/2907A.D 0.45E 1.00K

 0.1. Size:44K  kec
 ktn2222ae.pdf

KTN2222 KTN2222

SEMICONDUCTOR KTN2222AETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES BLow Leakage Current DDIM MILLIMETERS: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.D 0.27+0.10/-0.05_Complementary

 0.2. Size:411K  kec
 ktn2222s as.pdf

KTN2222 KTN2222

SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERSLow Leakage Current _+2.93 0.20AB 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.C 1.30 MAX2Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.1G

 0.3. Size:53K  kec
 ktn2222s ktn2222as.pdf

KTN2222 KTN2222

SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20Low Leakage Current B 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201G 1.90: VCE(sat)=0.3V(Max.) ; IC=150mA,

 0.4. Size:49K  kec
 ktn2222u au.pdf

KTN2222 KTN2222

SEMICONDUCTOR KTN2222U/AUTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES M B MDIM MILLIMETERSLow Leakage Current _A+2.00 0.20D2: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. _+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_E +2.10 0.20: VCE(sat)=0.3V(Max.) ; IC=150

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: CSD1616L | 2N2662 | 2SD1862 | 2SC1570

 

 
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