MJ10001 Todos los transistores

 

MJ10001 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ10001
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 175 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 325 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar MJ10001

 

MJ10001 Datasheet (PDF)

 8.1. Size:228K  motorola
mj10007r.pdf

MJ10001 MJ10001

Order this documentMOTOROLAby MJ10007/DSEMICONDUCTOR TECHNICAL DATAMJ10007*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE SeriesNPN Silicon Power Darlington10 AMPERENP

 8.2. Size:139K  motorola
mj1000re.pdf

MJ10001 MJ10001

Order this documentMOTOROLAby MJ1000/DSEMICONDUCTOR TECHNICAL DATANPNMJ1000Medium-Power Complementary*MJ1001Silicon Transistors*Motorola Preferred Device. . . for use as output

 8.3. Size:235K  motorola
mj10009r.pdf

MJ10001 MJ10001

Order this documentMOTOROLAby MJ10009/DSEMICONDUCTOR TECHNICAL DATAMJ10009*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series20 AMPERENPN Silicon Power DarlingtonNP

 8.4. Size:229K  motorola
mj10005r.pdf

MJ10001 MJ10001

Order this documentMOTOROLAby MJ10005/DSEMICONDUCTOR TECHNICAL DATA*MJ10005Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series20 AMPERENPN Silicon Power Darlington

 8.5. Size:212K  motorola
mj10000r.pdf

MJ10001 MJ10001

Order this documentMOTOROLAby MJ10000/DSEMICONDUCTOR TECHNICAL DATAMJ10000Designer's Data Sheet20 AMPERESWITCHMODE SeriesNPN SILICONPOWER DARLINGTONNPN Silicon Power Darlington

 8.6. Size:207K  comset
mj900-mj901-mj1000-mj1001-1.pdf

MJ10001 MJ10001

COMSETSEMICONDUCTORSSEMICONDUCTORSMJ900 MJ901 PNPMJ1000 MJ1001 NPNCOMPLEMENTARY POWER DARLINGTONSThe MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bastransistors in monolithic Darlington configuration, and are mountedin JEDEC TO-3 metal case. They are intended for usein power linear and switching applications.PNP types are the MJ900 and MJ901, and their compl

 8.7. Size:170K  comset
mj900-mj901-mj1000-mj1001.pdf

MJ10001 MJ10001

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10

 8.8. Size:212K  inchange semiconductor
mj10003.pdf

MJ10001 MJ10001

isc Silicon NPN Darlington Power Transistor MJ10003DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed , power switching inInductive circuits where fall time is critical. They are partic-ularly sui

 8.9. Size:211K  inchange semiconductor
mj10002.pdf

MJ10001 MJ10001

isc Silicon NPN Darlington Power Transistor MJ10002DESCRIPTIONLow Collector-Emitter Sustaining VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed , power switching inInductive circuits where fall time is critical. They are partic-ularly suit

 8.10. Size:206K  inchange semiconductor
mj1000.pdf

MJ10001 MJ10001

isc Silicon NPN Darlington Power Transistor MJ1000DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CLow Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 3ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devic

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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