MJ10005P Todos los transistores

 7.1. Size:229K  motorola
 mj10005r.pdf

Order this document MOTOROLA by MJ10005/D SEMICONDUCTOR TECHNICAL DATA * MJ10005 Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high voltage, high speed, powe

 8.1. Size:228K  motorola
 mj10007r.pdf

Order this document MOTOROLA by MJ10007/D SEMICONDUCTOR TECHNICAL DATA MJ10007* Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Darlington 10 AMPERE NPN SILICON Transistors with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high voltage, high speed, power

 8.2. Size:139K  motorola
 mj1000re.pdf

Order this document MOTOROLA by MJ1000/D SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 Medium-Power Complementary * MJ1001 Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applica- 10 AMPERE tions. DARLINGTON High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 Adc POWER TRANSISTORS Monolithic Constructi

 8.3. Size:235K  motorola
 mj10009r.pdf

Order this document MOTOROLA by MJ10009/D SEMICONDUCTOR TECHNICAL DATA MJ10009* Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high voltage, high speed,

 8.4. Size:212K  motorola
 mj10000r.pdf

Order this document MOTOROLA by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet 20 AMPERE SWITCHMODE Series NPN SILICON POWER DARLINGTON NPN Silicon Power Darlington TRANSISTORS 350 VOLTS Transistor 175 WATTS The MJ10000 Darlington transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. I

 8.5. Size:207K  comset
 mj900-mj901-mj1000-mj1001-1.pdf

COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their compl

 8.6. Size:170K  comset
 mj900-mj901-mj1000-mj1001.pdf

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10

 8.7. Size:212K  inchange semiconductor
 mj10003.pdf

isc Silicon NPN Darlington Power Transistor MJ10003 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly sui

 8.8. Size:211K  inchange semiconductor
 mj10002.pdf

isc Silicon NPN Darlington Power Transistor MJ10002 DESCRIPTION Low Collector-Emitter Sustaining Voltage High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suit

 8.9. Size:206K  inchange semiconductor
 mj1000.pdf

isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 3A FE C Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 3A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devic