MJ10014 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this document MOTOROLA by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington 50 AMPERE Transistors with Base-Emitter NPN SILICON POWER DARLINGTON Speedup Diode TRANSISTORS 400 AND 500 VOLTS The MJ10015 and MJ10016 Darlington transistors are designed for high voltage, 250 WATTS high speed, power switching in inductive

Order this document MOTOROLA by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor 10 AMPERE The MJ10012 and MJH10012 are high voltage, high current Darlington transistors POWER TRANSISTORS designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN Collector Emitter Sustaining Voltage

COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their compl

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10

isc Silicon NPN Darlington Power Transistor MJ10012T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Power Dissipation DARLINGTON 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATIN

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min.) High DC Current Gain- hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS Designed for use as output devices in complementary general purpose