MJ10020 Todos los transistores

 0.1. Size:293K  motorola
 mj10020r.pdf

Order this document MOTOROLA by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 Designer's Data Sheet SWITCHMODE Series 60 AMPERE NPN Silicon Power Darlington NPN SILICON POWER DARLINGTON Transistors with Base-Emitter TRANSISTORS 200 AND 250 VOLTS Speedup Diode 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high voltage, high speed, pow

 8.1. Size:300K  motorola
 mj10022r.pdf

Order this document MOTOROLA by MJ10022/D SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Designer's Data Sheet SWITCHMODE Series 40 AMPERE NPN Silicon Power Darlington NPN SILICON POWER DARLINGTON Transistors with Base-Emitter TRANSISTORS 350 AND 400 VOLTS Speedup Diode 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high voltage, high speed, pow

 9.1. Size:228K  motorola
 mj10007r.pdf

Order this document MOTOROLA by MJ10007/D SEMICONDUCTOR TECHNICAL DATA MJ10007* Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Darlington 10 AMPERE NPN SILICON Transistors with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high voltage, high speed, power

 9.2. Size:139K  motorola
 mj1000re.pdf

Order this document MOTOROLA by MJ1000/D SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 Medium-Power Complementary * MJ1001 Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applica- 10 AMPERE tions. DARLINGTON High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 Adc POWER TRANSISTORS Monolithic Constructi

 9.3. Size:235K  motorola
 mj10009r.pdf

Order this document MOTOROLA by MJ10009/D SEMICONDUCTOR TECHNICAL DATA MJ10009* Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high voltage, high speed,

 9.4. Size:217K  motorola
 mj10015r.pdf

Order this document MOTOROLA by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington 50 AMPERE Transistors with Base-Emitter NPN SILICON POWER DARLINGTON Speedup Diode TRANSISTORS 400 AND 500 VOLTS The MJ10015 and MJ10016 Darlington transistors are designed for high voltage, 250 WATTS high speed, power switching in inductive

 9.5. Size:191K  motorola
 mj10012 mj10012r.pdf

Order this document MOTOROLA by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor 10 AMPERE The MJ10012 and MJH10012 are high voltage, high current Darlington transistors POWER TRANSISTORS designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN Collector Emitter Sustaining Voltage

 9.6. Size:229K  motorola
 mj10005r.pdf

Order this document MOTOROLA by MJ10005/D SEMICONDUCTOR TECHNICAL DATA * MJ10005 Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high voltage, high speed, powe

 9.7. Size:212K  motorola
 mj10000r.pdf

Order this document MOTOROLA by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet 20 AMPERE SWITCHMODE Series NPN SILICON POWER DARLINGTON NPN Silicon Power Darlington TRANSISTORS 350 VOLTS Transistor 175 WATTS The MJ10000 Darlington transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. I

 9.8. Size:207K  comset
 mj900-mj901-mj1000-mj1001-1.pdf

COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their compl

 9.9. Size:170K  comset
 mj900-mj901-mj1000-mj1001.pdf

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10

 9.10. Size:212K  inchange semiconductor
 mj10003.pdf

isc Silicon NPN Darlington Power Transistor MJ10003 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly sui

 9.11. Size:211K  inchange semiconductor
 mj10002.pdf

isc Silicon NPN Darlington Power Transistor MJ10002 DESCRIPTION Low Collector-Emitter Sustaining Voltage High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suit

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 mj10012.pdf

 9.13. Size:216K  inchange semiconductor
 mj10012t.pdf

isc Silicon NPN Darlington Power Transistor MJ10012T DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Power Dissipation DARLINGTON 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATIN

 9.14. Size:101K  inchange semiconductor
 mj1001.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min.) High DC Current Gain- hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS Designed for use as output devices in complementary general purpose

 9.15. Size:206K  inchange semiconductor
 mj1000.pdf

isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 3A FE C Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 3A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devic