MJ11011 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ11011 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 2000
Encapsulados: TO3
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MJ11011 datasheet
..1. Size:207K inchange semiconductor
mj11011.pdf 
isc Silicon PNP Darlington Power Transistor MJ11011 DESCRIPTION Collector-Emitter Breakdown Voltage V = -60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -20A FE C Low Collector Saturation Voltage- V = -3.0V(Max.)@ I = -20A CE (sat) C Complement to NPN Type MJ11012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT
8.1. Size:235K motorola
mj11017-18 21-22 mj11017r.pdf
Order this document MOTOROLA by MJ11017/D SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 Complementary Darlington MJ11021* Silicon Power Transistors NPN . . . designed for use as general purpose amplifiers, low frequency switching and MJ11018* motor control applications. High dc Current Gain @ 10 Adc hFE = 400 Min (All Types) MJ11022 Collector Emitter Sustaining Voltage
8.2. Size:157K motorola
mj11012r.pdf
Order this document MOTOROLA by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP MJ11013 High-Current Complementary MJ11015 Silicon Transistors NPN MJ11012 . . . for use as output devices in complementary general purpose amplifier applica- tions. High DC Current Gain hFE = 1000 (Min) @ IC 20 Adc MJ11014 Monolithic Construction with Built in Base Emitter Shunt Resistor
8.3. Size:116K onsemi
mj11012g.pdf
MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors http //onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. 30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORS hFE = 1000 (Min) @ IC - 20 Adc COMPLEMENTARY SILICON Monolithic Construction with Built-in
8.4. Size:116K onsemi
mj11016g.pdf
MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors http //onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. 30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORS hFE = 1000 (Min) @ IC - 20 Adc COMPLEMENTARY SILICON Monolithic Construction with Built-in
8.5. Size:116K onsemi
mj11015g.pdf
MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors http //onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. 30 AMPERE DARLINGTON High DC Current Gain - POWER TRANSISTORS hFE = 1000 (Min) @ IC - 20 Adc COMPLEMENTARY SILICON Monolithic Construction with Built-in
8.6. Size:171K cdil
mj11015 6.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJ11015 PNP SILICON PLANAR DARLINGTON POWER TRANSISTORS MJ11016 NPN Metal Can Package TO-3 Designed for use as Output Devices in Complementary General Purpose Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO V 120 Collector
8.7. Size:212K inchange semiconductor
mj11017.pdf
isc Silicon PNP Darlington Power Transistor MJ11017 DESCRIPTION High DC Current Gain- h = 400(Min)@ I = -10A FE C Collector-Emitter Sustaining Voltage- V = -150V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -10A CE(sat) C = -3.4V(Max)@ I = -15A C Complement to the NPN MJ11018 Minimum Lot-to-Lot variations for robust device performanc
8.8. Size:212K inchange semiconductor
mj11018.pdf
isc Silicon NPN Darlington Power Transistor MJ11018 DESCRIPTION Collector-Emitter Sustaining Voltage V = 150V (Min.) CEO(SUS) High DC Current Gain- h = 400(Min.)@I = 10A FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 5.0A CE (sat) C Complement to the PNP MJ11017 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI
8.9. Size:208K inchange semiconductor
mj11013.pdf
isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -90V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -20A FE C Low Collector Saturation Voltage- V = -3.0V(Max.)@ I = -20A CE (sat) C Complement to the NPN MJ11014 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT
8.10. Size:211K inchange semiconductor
mj11019.pdf
isc Silicon PNP Darlington Power Transistor MJ11019 DESCRIPTION High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to the NPN MJ11020 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABS
8.11. Size:51K inchange semiconductor
mj11016.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11016 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min.) High DC Current Gain- hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to Type MJ11015 APPLICATIONS Designed for use as output devices
8.12. Size:208K inchange semiconductor
mj11015.pdf
isc Silicon PNP Darlington Power Transistor MJ11015 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -20A FE C Low Collector Saturation Voltage- V = -3.0V(Max.)@ I = -20A CE (sat) C Complement to the NPN MJ11016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA
8.13. Size:207K inchange semiconductor
mj11014.pdf
isc Silicon NPN Darlington Power Transistor MJ11014 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 20A FE C Low Collector Saturation Voltage- V = 3.0V(Max.)@ I = 20A CE (sat) C Complement to the PNP MJ11013 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
8.14. Size:207K inchange semiconductor
mj11012.pdf
isc Silicon NPN Darlington Power Transistor MJ11012 DESCRIPTION Collector-Emitter Breakdown Voltage V = 60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 20A FE C Low Collector Saturation Voltage- V = 3.0V(Max.)@ I = 20A CE (sat) C Complement to the PNP MJ11011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
Otros transistores... MJ100BK100, MJ10100, MJ10101, MJ10102, MJ10200, MJ10201, MJ10202, MJ105, 2SC1815, MJ11012, MJ11013, MJ11014, MJ11015, MJ11016, MJ11017, MJ11018, MJ11019
