MJ11021 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ11021
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 175 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 600 pF
Ganancia de corriente contínua (hfe): 8000
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar MJ11021
MJ11021 Datasheet (PDF)
mj11021g.pdf
MJ11021(PNP)MJ11022 (NPN)Complementary DarlingtonSilicon Power TransistorsComplementary Darlington Silicon Power Transistors are designedfor use as general purpose amplifiers, low frequency switching andhttp://onsemi.commotor control applications.15 AMPEREFeaturesCOMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)DARLINGTON POWER Collector-Emi
mj11028r.pdf
Order this documentMOTOROLAby MJ11028/DSEMICONDUCTOR TECHNICAL DATANPNMJ11028High-Current ComplementaryMJ11030Silicon TransistorsMJ11032*. . . for use as output devices in complementary general purpose amplifier applica-PNPtions. High DC Current Gain hFE = 1000 (Min) @ IC = 25 AdcMJ11029hFE = 400 (Min) @ IC = 50 Adc Curves to 100 A (Pulsed)MJ11031
mj11022g.pdf
MJ11021(PNP)MJ11022 (NPN)Complementary DarlingtonSilicon Power TransistorsComplementary Darlington Silicon Power Transistors are designedfor use as general purpose amplifiers, low frequency switching andhttp://onsemi.commotor control applications.15 AMPEREFeaturesCOMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)DARLINGTON POWER Collector-Emi
mj11028g.pdf
MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary SiliconPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc60 - 120 VOLTS
mj11028.pdf
isc Silicon NPN Darlington Power Transistor MJ11028DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in comp
mj11022.pdf
isc Silicon NPN Darlington Power Transistor MJ11022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp
mj11029.pdf
isc Silicon PNP Darlington Power Transistor MJ11029DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -25AFE C: h = 400(Min.)@I = -50AFE CComplement to the NPN MJ11028Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in c
mj11020.pdf
isc Silicon NPN Darlington Power Transistor MJ11020DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: CHT127ZGP
History: CHT127ZGP
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Recientemente añadidas las descripciónes de los transistores:
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