MJ11022 Todos los transistores

 ..1. Size:208K  inchange semiconductor
 mj11022.pdf

isc Silicon NPN Darlington Power Transistor MJ11022 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V (Min.) CEO(SUS) High DC Current Gain- h = 400(Min.)@I = 10A FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 5.0A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp

 0.1. Size:127K  onsemi
 mj11022g.pdf

MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and http //onsemi.com motor control applications. 15 AMPERE Features COMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types) DARLINGTON POWER Collector-Emi

 8.1. Size:153K  motorola
 mj11028r.pdf

 8.2. Size:116K  onsemi
 mj11028g.pdf

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High-Current Complementary Silicon Power Transistors are for use 50 AMPERE as output devices in complementary general purpose amplifier COMPLEMENTARY applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc 60 - 120 VOLTS

 8.3. Size:127K  onsemi
 mj11021g.pdf

MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and http //onsemi.com motor control applications. 15 AMPERE Features COMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types) DARLINGTON POWER Collector-Emi

 8.4. Size:208K  inchange semiconductor
 mj11028.pdf

isc Silicon NPN Darlington Power Transistor MJ11028 DESCRIPTION Collector-Emitter Breakdown Voltage V = 60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 25A FE C h = 400(Min.)@I = 50A FE C Complement to the PNP MJ11029 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in comp

 8.5. Size:207K  inchange semiconductor
 mj11029.pdf

isc Silicon PNP Darlington Power Transistor MJ11029 DESCRIPTION Collector-Emitter Breakdown Voltage V = -60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -25A FE C h = 400(Min.)@I = -50A FE C Complement to the NPN MJ11028 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in c

 8.6. Size:208K  inchange semiconductor
 mj11020.pdf

isc Silicon NPN Darlington Power Transistor MJ11020 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V (Min.) CEO(SUS) High DC Current Gain- h = 400(Min.)@I = 10A FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 5.0A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp