MJ11028
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ11028
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 300
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 50
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar MJ11028
MJ11028
Datasheet (PDF)
..1. Size:208K inchange semiconductor
mj11028.pdf 
isc Silicon NPN Darlington Power Transistor MJ11028DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in comp
0.1. Size:153K motorola
mj11028r.pdf
Order this documentMOTOROLAby MJ11028/DSEMICONDUCTOR TECHNICAL DATANPNMJ11028High-Current ComplementaryMJ11030Silicon TransistorsMJ11032*. . . for use as output devices in complementary general purpose amplifier applica-PNPtions. High DC Current Gain hFE = 1000 (Min) @ IC = 25 AdcMJ11029hFE = 400 (Min) @ IC = 50 Adc Curves to 100 A (Pulsed)MJ11031
0.2. Size:116K onsemi
mj11028g.pdf
MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary SiliconPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc60 - 120 VOLTS
8.1. Size:127K onsemi
mj11022g.pdf
MJ11021(PNP)MJ11022 (NPN)Complementary DarlingtonSilicon Power TransistorsComplementary Darlington Silicon Power Transistors are designedfor use as general purpose amplifiers, low frequency switching andhttp://onsemi.commotor control applications.15 AMPEREFeaturesCOMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)DARLINGTON POWER Collector-Emi
8.2. Size:127K onsemi
mj11021g.pdf
MJ11021(PNP)MJ11022 (NPN)Complementary DarlingtonSilicon Power TransistorsComplementary Darlington Silicon Power Transistors are designedfor use as general purpose amplifiers, low frequency switching andhttp://onsemi.commotor control applications.15 AMPEREFeaturesCOMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)DARLINGTON POWER Collector-Emi
8.3. Size:208K inchange semiconductor
mj11022.pdf
isc Silicon NPN Darlington Power Transistor MJ11022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp
8.4. Size:207K inchange semiconductor
mj11029.pdf
isc Silicon PNP Darlington Power Transistor MJ11029DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -25AFE C: h = 400(Min.)@I = -50AFE CComplement to the NPN MJ11028Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in c
8.5. Size:208K inchange semiconductor
mj11020.pdf
isc Silicon NPN Darlington Power Transistor MJ11020DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp
Otros transistores... 2N3200
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