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MJ14002 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ14002
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 300 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 60 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2000 pF
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3
 

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MJ14002 Datasheet (PDF)

 ..1. Size:90K  onsemi
 mj14001 mj14002 mj14003 mj14003g mj14002g mj14001g.pdf pdf_icon

MJ14002

MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS

 ..2. Size:90K  onsemi
 mj14001 mj14002 mj14003.pdf pdf_icon

MJ14002

MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS

 0.1. Size:90K  onsemi
 mj14002g.pdf pdf_icon

MJ14002

MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS

 8.1. Size:241K  motorola
 mj14001r.pdf pdf_icon

MJ14002

Order this documentMOTOROLAby MJ14001/DSEMICONDUCTOR TECHNICAL DATANPNMJ14002*High-Current ComplementaryPNPMJ14001Silicon Power Transistors. . . designed for use in highpower amplifier and switching circuit applications,MJ14003* High Current Capability IC Continuous = 60 Amperes DC Current Gain hFE = 15100 @ IC = 50 Adc*Motorola Preferred Device

MOSTRAR MÁS

Otros transistores... MJ13330 , MJ13331 , MJ13332 , MJ13333 , MJ13334 , MJ13335 , MJ14000 , MJ14001 , 2SC1740 , MJ14003 , MJ15001 , MJ15002 , MJ15003 , MJ15004 , MJ15011 , MJ15012 , MJ15015 .

History: BCR169 | KSE13008

 

 
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