MJ15026 Todos los transistores

 ..1. Size:64K  wingshing
 mj15026.pdf

MJ15026 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER TO-3 High Current Capability High Power Dissipation Complementary to MJ15027 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 200 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 16 A Collector

 ..2. Size:166K  cn sptech
 mj15026.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJ15026 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 5A CE(sat C Complement to the PNP MJ15027 APPLICATIONS Designed for high power audio, disk head positioners , and other linear applications. ABSOLUTE MAXI

 ..3. Size:206K  inchange semiconductor
 mj15026.pdf

isc Silicon NPN Power Transistor MJ15026 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 5A CE(sat C Complement to the PNP MJ15027 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positi

 8.1. Size:144K  motorola
 mj15023-25 mj15023r.pdf

 8.2. Size:153K  motorola
 mj15022-24 mj15022r.pdf

 8.3. Size:99K  onsemi
 mj15023 mj15025.pdf

MJ15023 (PNP), MJ15025 (PNP) Silicon Power Transistors The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area 16 AMPERES High DC Current Gain SILICON POWER TRANSISTORS Complementary to MJ15022 (NPN), MJ15024 (NPN) 200 - 250 VOLTS, 250 WATTS T

 8.4. Size:73K  onsemi
 mj15022g.pdf

NPN - MJ15022, MJ15024* *MJ15024 is a Preferred Device Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Pack

 8.5. Size:72K  onsemi
 mj15025g.pdf

PNP - MJ15023, MJ15025* *MJ15025 is a Preferred Device Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Packa

 8.6. Size:73K  onsemi
 mj15024g.pdf

NPN - MJ15022, MJ15024* *MJ15024 is a Preferred Device Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Pack

 8.7. Size:161K  onsemi
 mj15022 mj15024.pdf

MJ15022 (NPN), MJ15024 (NPN) Silicon Power Transistors The MJ15022 and MJ15024 are power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area High DC Current Gain 16 AMPERES These Devices are Pb-Free and are RoHS Compliant* SILICON POWER TRANSISTORS 200 - 250 VOLTS, 250 WATTS

 8.8. Size:72K  onsemi
 mj15023g.pdf

PNP - MJ15023, MJ15025* *MJ15025 is a Preferred Device Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Packa

 8.9. Size:175K  jmnic
 mj15029.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 DESCRIPTION With TO-220C package Complement to type MJE15028 High transition frequency DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. PINNING PIN DES

 8.10. Size:348K  jmnic
 mj15028.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE15028 DESCRIPTION With TO-220C package Complement to type MJE15029 High transition frequency DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. PINNING PIN DESCR

 8.11. Size:114K  jmnic
 mj15022 mj15024.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION With TO-3 package Complement to type MJ15023 MJ15025 Excellent Safe Operating Area High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION 1 Bas

 8.12. Size:191K  cn sptech
 mj15022 mj15024.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION Complement to Type PNP MJ15023/15025 Excellent Safe Operating Area High DC current Gain APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT MJ15022 350 V Collector-Base Voltag

 8.13. Size:117K  inchange semiconductor
 mj15023 mj15025.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15023 MJ15025 DESCRIPTION With TO-3 package Complement to type MJ15022; MJ15024 Excellent safe operating area High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPT

 8.14. Size:207K  inchange semiconductor
 mj15025.pdf

isc Silicon PNP Power Transistors MJ15025 DESCRIPTION Complement to Type NPN MJ15024 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE

 8.15. Size:212K  inchange semiconductor
 mj15024.pdf

isc Silicon NPN Power Transistors MJ15024 DESCRIPTION Complement to Type PNP MJ15025 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE

 8.16. Size:204K  inchange semiconductor
 mj15027.pdf

isc Silicon PNP Power Transistor MJ15027 DESCRIPTION High current capability High power dissipation Complement to the NPN MJ15026 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier DC to DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

 8.17. Size:215K  inchange semiconductor
 mj15022 mj15024.pdf

isc Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION Complement to Type PNP MJ15023/15025 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARA

 8.18. Size:213K  inchange semiconductor
 mj15023.pdf

isc Silicon PNP Power Transistors MJ15023 DESCRIPTION Complement to Type NPN MJ15022 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE