MJ4034 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ4034
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar MJ4034
MJ4034 Datasheet (PDF)
mj4030-mj4031-mj4032-mj4033-mj4034-mj4035.pdf
MEDIUM POWER COMPLEMENTARY SILICON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS TRANSISTORS For use as output devices in complementary general purpose amplifier applications. High DC current Gain hFE=3500 (Typ) @ IC=10 Adc Monolithic Construction with Built-in Base Emitter Shunt Resistor The MJ4030/31/32 ares the transistors NPN The complementary PNP types are t
mj4032 mj4035.pdf
MJ4032MJ4035COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 1 GENERAL PURPOSE SWITCHING 2 GENERAL PURPOSE AMPLIFIERS DESCRIPTION TO-3The MJ4035 is silicon epitaxial-base NPN powertransistor in mon
mj4033 4034 4035.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ4033/4034/4035 DESCRIPTION With TO-3 package Respectively complement to type MJ4030/4031/4032 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 si
mj4032.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4032 DESCRIPTION With TO-3 package Respectively complement to type MJ4035 DARLINGTON High DC current gain APPLICATIONSFor use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UNITVCBO
mj4030.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4030 DESCRIPTION With TO-3 package Respectively complement to type MJ4035 DARLINGTON High DC current gain APPLICATIONSFor use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UNITVCBO
mj4031.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4031 DESCRIPTION With TO-3 package Respectively complement to type MJ4034 DARLINGTON High DC current gain APPLICATIONSFor use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UNITVCBO
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 3CG5
History: 3CG5
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050