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MJ8503 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ8503
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 1400 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 7.5
   Paquete / Cubierta: TO3
 

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MJ8503 Datasheet (PDF)

 ..1. Size:170K  inchange semiconductor
 mj8503.pdf pdf_icon

MJ8503

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8503 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applica

 9.1. Size:207K  inchange semiconductor
 mj8504.pdf pdf_icon

MJ8503

isc Silicon NPN Power Transistor MJ8504DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

 9.2. Size:170K  inchange semiconductor
 mj8501.pdf pdf_icon

MJ8503

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.3. Size:170K  inchange semiconductor
 mj8500.pdf pdf_icon

MJ8503

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

MOSTRAR MÁS

Otros transistores... MJ7261 , MJ802 , MJ8100 , MJ8101 , MJ8400 , MJ8500 , MJ8501 , MJ8502 , BC556 , MJ8504 , MJ8505 , MJ900 , MJ9000 , MJ901 , MJ920 , MJ921 , MJD112 .

History: ST2SB772U | 2SD1304 | 2SB1115A | LUMA5NT1G | ECG245 | SGS912 | MJ8400

 

 
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