MJ8505 Todos los transistores

 

MJ8505 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ8505
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 175 W
   Tensión colector-base (Vcb): 1400 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 450 pF
   Ganancia de corriente contínua (hfe): 7.5
   Paquete / Cubierta: TO3
 

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MJ8505 datasheet

 ..1. Size:207K  inchange semiconductor
mj8505.pdf pdf_icon

MJ8505

isc Silicon NPN Power Transistor MJ8505 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

 9.1. Size:207K  inchange semiconductor
mj8504.pdf pdf_icon

MJ8505

isc Silicon NPN Power Transistor MJ8504 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

 9.2. Size:170K  inchange semiconductor
mj8501.pdf pdf_icon

MJ8505

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.3. Size:170K  inchange semiconductor
mj8500.pdf pdf_icon

MJ8505

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

Otros transistores... MJ8100 , MJ8101 , MJ8400 , MJ8500 , MJ8501 , MJ8502 , MJ8503 , MJ8504 , 2222A , MJ900 , MJ9000 , MJ901 , MJ920 , MJ921 , MJD112 , MJD112-1 , MJD112T4 .

 

 

 


 
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