MJ8505
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ8505
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 175
W
Tensión colector-base (Vcb): 1400
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 450
pF
Ganancia de corriente contínua (hfe): 7.5
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar MJ8505
MJ8505
Datasheet (PDF)
..1. Size:207K inchange semiconductor
mj8505.pdf 
isc Silicon NPN Power Transistor MJ8505DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
9.1. Size:207K inchange semiconductor
mj8504.pdf
isc Silicon NPN Power Transistor MJ8504DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line
9.2. Size:170K inchange semiconductor
mj8501.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
9.3. Size:170K inchange semiconductor
mj8500.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
9.4. Size:170K inchange semiconductor
mj8503.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8503 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applica
9.5. Size:170K inchange semiconductor
mj8502.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8502 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
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