MJD350 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJD350
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO251

Búsqueda de reemplazo de transistor bipolar MJD350

MJD350 Datasheet (PDF)

..1. Size:194K motorola
mjd340re mjd350.pdf

Order this documentMOTOROLAby MJD340/DSEMICONDUCTOR TECHNICAL DATANPN*MJD340High Voltage Power Transistors PNPMJD350*DPAK For Surface Mount ApplicationsDesigned for line operated audio output amplifier, switchmode power supply drivers*Motorola Preferred Deviceand other switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

..2. Size:503K st
mjd340 mjd350.pdf

MJD340MJD350COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MEDIUM VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX "T4")3 ELECTRICAL SIMILAR TO MJE340 ANDMJE3501APPLICATIONS SOLENOID/RELAY DRIVERS DPAK GENERAL PURPOSE SWITCHING ANDTO-252AMPLIFIER (S

..3. Size:37K fairchild semi
mjd350.pdf

MJD350High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO

..4. Size:667K diodes
mjd350.pdf

MJD350 300V PNP HIGH VOLTAGE TRANSISTOR IN TO252 (DPAK) Features Mechanical Data BVCEO > -300V Case: TO252 (DPAK) Case Material: Molded Plastic, "Green" Molding Compound IC = -0.5A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = -0.75A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 Ideal for Power Switc

..5. Size:177K onsemi
mjd340 mjd350.pdf

MJD340 (NPN),MJD350 (PNP)High Voltage PowerTransistorsDPAK for Surface Mount Applicationswww.onsemi.comDesigned for line operated audio output amplifier, switchmodepower supply drivers and other switching applications.Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS(No Suffix)0.5 AMPERE Electrically Similar to Popular

..6. Size:809K blue-rocket-elect
mjd350.pdf

MJD350 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features High voltage. / Applications High voltage general purpose applications. / Equivalent Circuit / Pinning 4 1 2

..7. Size:205K inchange semiconductor
mjd350.pdf

isc Silicon PNP Power Transistor MJD350DESCRIPTIONCollectorEmitter Sustaining Voltage-: V =CEO(SUS) -300 V(Min)Low Collector Saturation Voltage-: V = -1.0V(Max.)@ I = -50mACE(sat) CDPAK for Surface Mount ApplicationsComplement to Type MJD340Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for line oper

0.1. Size:172K onsemi
mjd350t4g.pdf

MJD340,NJVMJD340T4G (NPN),MJD350,NJVMJD350T4G (PNP)High Voltage Powerhttp://onsemi.comTransistorsDPAK For Surface Mount ApplicationsSILICONDesigned for line operated audio output amplifier, switchmodePOWER TRANSISTORSpower supply drivers and other switching applications.0.5 AMPEREFeatures300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S

0.2. Size:172K onsemi
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