MJD42C Todos los transistores

 ..1. Size:195K  motorola
 mjd41c mjd42c.pdf

Order this document MOTOROLA by MJD41C/D SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* Complementary Power PNP MJD42C* Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straigh

 ..2. Size:207K  onsemi
 mjd41c mjd42c.pdf

 ..3. Size:1788K  jiangsu
 mjd42c.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD42C TRANSISTOR (PNP) TO-252-2L FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications. 1.BASE Lead Formed for Surface Mount Applications in Plastic 2 2.COLLECTOR Sleeves (No Suffix) 1 3 3.EMITTER Straight Lead Version in Plastic Sleeves ( 1 Su

 ..4. Size:231K  lge
 mjd42c.pdf

MJD42C(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( 1 Suffix) TO-252-2L Lead Formed Version in 16 mm Tape and Reel ( T4 S

 ..5. Size:822K  blue-rocket-elect
 mjd42c.pdf

MJD42C Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features MJD41C Complement to MJD41C. / Applications Medium power linear switching applications. / Equivalent Circuit /

 ..6. Size:241K  inchange semiconductor
 mjd42c.pdf

isc Silicon PNP Power Transistors MJD42C DESCRIPTION DC Current Gain -h = 30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type MJD41C DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and low

 0.1. Size:173K  onsemi
 njvmjd41c njvmjd42c.pdf

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

 0.2. Size:173K  onsemi
 mjd42crlg.pdf

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

 0.3. Size:173K  onsemi
 mjd42cg.pdf

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

 0.4. Size:173K  onsemi
 mjd42c1g.pdf

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

 0.5. Size:59K  onsemi
 mjd42ct4g.pdf

MJD41C (NPN) MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 6 AMPERES (No Suffix) 100 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves ( 1