MJE16204 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE16204
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 650 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Capacitancia de salida (Cc): 150 pF
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar MJE16204
MJE16204 Datasheet (PDF)
mje16204.pdf
Order this documentMOTOROLAby MJE16204/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetMJE16204SCANSWITCHNPN Bipolar Power Deflection TransistorFor High and Very High Resolution MonitorsPOWER TRANSISTORSThe MJE16204 is a stateoftheart SWITCHMODE bipolar power transistor. It is6.0 AMPERESspecifically designed for use in horizontal deflection circuits f
mje16106.pdf
Order this documentMOTOROLAby MJE16106/DSEMICONDUCTOR TECHNICAL DATAMJE16106Designer's Data SheetNPN Silicon Power TransistorPOWER TRANSISTORSSwitchmode Bridge Series8 AMPERES400 VOLTS. . . specifically designed for use in half bridge and full bridge off line converters.100 AND 125 WATTS Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability
mje16002.pdf
Order this documentMOTOROLAby MJE16002/DSEMICONDUCTOR TECHNICAL DATA*MJE16002Designer's Data Sheet*MJE16004SWITCHMODE SeriesNPN Silicon Power Transistors*Motorola Preferred DeviceThese transistors are designed for highvoltage, highspeed switching of inductive5.0 AMPEREcircuits where fall time and RBSOA are critical. They are particularly wellsuited forN
mje16004.pdf
isc Silicon NPN Power Transistor MJE16004DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed switching ofinductive circuits where fall time and RBSOA are critical.they are particularly wel
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
