MJE170 Todos los transistores

 ..1. Size:49K  fairchild semi
 mje170 mje171 mje172.pdf

MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE170 - 60 V MJE171 - 80 V MJE172 - 100 V VCEO Collector-Emitter Voltage MJE170 - 40 V MJE171 - 60

 ..2. Size:82K  onsemi
 mje170 mje171 mje172 mje180 mje181 mje182.pdf

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - M

 ..3. Size:168K  onsemi
 mje170 mje171 mje172.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..4. Size:117K  inchange semiconductor
 mje170 171 172.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJE170/171/172 DESCRIPTION With TO-126 package Complement to type MJE180/181/182 APPLICATIONS For low power audio amplifier and low current high speed switching applications PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Rat

 ..5. Size:213K  inchange semiconductor
 mje170.pdf

isc Silicon PNP Power Transistor MJE170 DESCRIPTION Collector Emitter Sustaining Voltage V = CEO(SUS) -40V DC Current Gain h = 30(Min) @ I = -0.5 A FE C = 12(Min) @ I = -1.5 A C Complement to the NPN MJE180 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low power audio amplifier applications. Low current hig

 0.1. Size:119K  onsemi
 mje170g mje171g mje172g mje180g mje181g mje182g.pdf

MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS High DC Current Gain COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product 40 - 60 -

 0.2. Size:124K  onsemi
 mje170g.pdf

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60

 0.3. Size:104K  secos
 mje170-mje172.pdf

MJE170 / MJE171 / MJE172 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product TO-126 A suffix of -C specifies halogen and lead free FEATURES Low frequency amplifier Emitter Collector Low current Base High speed switching applications A B E F C N H L M K D J G Millimeter Millimeter REF. REF. Min. Max. M

 0.4. Size:551K  cdil
 mje170-2 mje180-2.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BA