MJE18002 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE18002
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 6.5 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hFE): 14
Encapsulados: TO220
Búsqueda de reemplazo de MJE18002
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MJE18002 datasheet
..1. Size:254K motorola
mje18002.pdf 
Order this document MOTOROLA by MJE18002/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MJE18002* SWITCHMODE MJF18002* NPN Bipolar Power Transistor *Motorola Preferred Device For Switching Power Supply Applications The MJE/MJF18002 have an applications specific state of the art die designed POWER TRANSISTOR for use in 220 V line operated Switchmode Power supplies a
..2. Size:155K onsemi
mje18002.pdf
MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state-of-the-art die http //onsemi.com designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. POWER TRANSISTOR Features 2.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements 100 VOLTS - 50 W
..3. Size:216K inchange semiconductor
mje18002.pdf
isc Silicon NPN Power Transistor MJE18002 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
7.1. Size:433K motorola
mje18009.pdf
Order this document MOTOROLA by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 Designer's Data Sheet MJF18009 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS The MJE/MJF18009 has an application specific state of the art die designed for 10 AMPERES use in 220 V line operated Switchmode Power supplies and electronic ballast ( light 1000 VOLTS balla
7.2. Size:421K motorola
mje18008.pdf
Order this document MOTOROLA by MJE18008/D SEMICONDUCTOR TECHNICAL DATA * MJE18008 Designer's Data Sheet * MJF18008 SWITCHMODE *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES The MJE/MJF18008 have an applications specific state of the art die designed 1000 VOLTS for use in 220 V line oper
7.3. Size:415K motorola
mje18006.pdf
Order this document MOTOROLA by MJE18006/D SEMICONDUCTOR TECHNICAL DATA * MJE18006 Designer's Data Sheet * MJF18006 SWITCHMODE *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES The MJE/MJF18006 have an applications specific state of the art die designed 1000 VOLTS for use in 220 V line oper
7.4. Size:422K motorola
mje18004.pdf
Order this document MOTOROLA by MJE18004/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet * MJE18004 SWITCHMODE * MJF18004 NPN Bipolar Power Transistor *Motorola Preferred Device For Switching Power Supply Applications POWER TRANSISTOR The MJE/MJF18004 have an applications specific state of the art die designed 5.0 AMPERES for use in 220 V line operated Switchmod
7.5. Size:341K onsemi
mje18008.pdf
DATA SHEET www.onsemi.com Switch-mode NPN Bipolar POWER TRANSISTOR Power Transistor 8.0 AMPERES 1000 VOLTS For Switching Power Supply Applications 45 and 125 WATTS COLLECTOR MJE18008 2,4 The MJE18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power supplies 1 and electronic light ballasts. BASE Features 3 EMITTER
7.6. Size:202K onsemi
mje18006-d.pdf
MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state-of-the-art die http //onsemi.com designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts. POWER TRANSISTOR Features 6.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements 1000 VOLTS - 100
7.7. Size:233K onsemi
mje18004d2.pdf
MJE18004D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation http //onsemi.com Network POWER TRANSISTORS The MJE18004D2 is state-of-art High Speed High gain BIPolar 5 AMPERES, transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread ( 150 ns on storage time) make it ideally suitable
7.9. Size:340K onsemi
mje18004 mjf18004.pdf
MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 5.0 AMPERES Hi
7.10. Size:145K onsemi
mje18008g.pdf
MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi
7.11. Size:139K onsemi
mje18008 mjf18008.pdf
MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated switch-mode Power www.onsemi.com supplies and electronic light ballasts. Features POWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements 8.0 AMPERES Hi
7.12. Size:94K jmnic
mje18008.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI
7.13. Size:95K jmnic
mje18006.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI
7.14. Size:216K inchange semiconductor
mje18008.pdf
isc Silicon NPN Power Transistor MJE18008 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
7.15. Size:216K inchange semiconductor
mje18006.pdf
isc Silicon NPN Power Transistor MJE18006 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
7.16. Size:216K inchange semiconductor
mje18004.pdf
isc Silicon NPN Power Transistor MJE18004 DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
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