MJE210 Todos los transistores

 

MJE210 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE210
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 65 MHz
   Capacitancia de salida (Cc): 120 pF
   Ganancia de corriente contínua (hfe): 45
   Paquete / Cubierta: TO126
 

 Búsqueda de reemplazo de MJE210

   - Selección ⓘ de transistores por parámetros

 

MJE210 Datasheet (PDF)

 ..1. Size:63K  st
 mje210.pdf pdf_icon

MJE210

MJE210SILICON PNP TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTORDESCRIPTION The MJE210 is a silicon epitaxial-base PNPtransistor in Jedec SOT-32 plastic package,designed for low voltage, low power, high gainaydio amplifier applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE

 ..2. Size:53K  st
 mje210 2.pdf pdf_icon

MJE210

MJE210SILICON PNP TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORDESCRIPTION The MJE210 is a silicon Epitaxial-Base PNPtransistor in Jedec SOT-32 plastic package,designed for low voltage, low power, high gainaudio amplifier applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base

 ..3. Size:41K  fairchild semi
 mje210.pdf pdf_icon

MJE210

MJE210Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) Complement to MJE200TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2

 ..4. Size:115K  onsemi
 mje200 mje210.pdf pdf_icon

MJE210

MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: UNR521E | EMG2

 

 
Back to Top

 


 
.