MJE2483 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE2483
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar MJE2483
MJE2483 Datasheet (PDF)
mje243re.pdf
Order this documentMOTOROLAby MJE243/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon Power*MJE243Plastic TransistorsPNP. . . designed for low power audio amplifier and lowcurrent, highspeed switching*MJE253applications. High CollectorEmitter Sustaining Voltage *Motorola Preferred DeviceVCEO(sus) = 100 Vdc (Min) MJE243, MJE253 High DC
mje243 mje253.pdf
MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =
mje243g.pdf
MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =
mje243g mje253g.pdf
MJE243G (NPN),MJE253G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining VoltagePOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON Low Collector-Emitter Saturation Voltage
mje243 mje253.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE243TO-126 Plastic PackageECBComplementary MJE253Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL Value UNITCollector Base Voltage VCBO 100 VCollector Emitter
mje243.pdf
isc Silicon NPN Power Transistor MJE243DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 100 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 0.2 AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJE253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigne
mje240.pdf
isc Silicon NPN Power Transistor MJE240DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 80 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 0.2 AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJE250Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: MMBT918L
History: MMBT918L
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050