MJE250
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE250
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40
MHz
Capacitancia de salida (Cc): 70
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar MJE250
MJE250
Datasheet (PDF)
9.1. Size:187K onsemi
mje243 mje253.pdf 
MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =
9.2. Size:183K onsemi
mje253g.pdf
MJE243 - NPN,MJE253 - PNPComplementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdcCOMPLEMENTARY SILICONhFE =
9.3. Size:157K onsemi
mje243g mje253g.pdf
MJE243G (NPN),MJE253G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low power audio amplifier andlow-current, high-speed switching applications.http://onsemi.comFeatures4.0 AMPERES High Collector-Emitter Sustaining VoltagePOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON Low Collector-Emitter Saturation Voltage
9.4. Size:203K cdil
mje243 mje253.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE243TO-126 Plastic PackageECBComplementary MJE253Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL Value UNITCollector Base Voltage VCBO 100 VCollector Emitter
9.5. Size:214K inchange semiconductor
mje253.pdf
isc Silicon PNP Power Transistor MJE253DESCRIPTIONCollectorEmitter Sustaining Voltage-: V =CEO(SUS) -100 V(Min)DC Current Gain-: h = 40(Min) @ I = -0.2 AFE CLow Collector Saturation Voltage-: V = -0.3V(Max.)@ I = -0.5 ACE(sat) CComplement to the NPN MJE243Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDes
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
