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MJE344K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE344K
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 200 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO220
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MJE344K Datasheet (PDF)

 8.1. Size:67K  st
mje3440.pdf pdf_icon

MJE344K

MJE3440SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTORDESCRIPTIONThe MJE3440 is a NPN silicon epitaxial planartransistors in SOT-32 plastic package. It isdesigned for use in consumer and industrialline-operated applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO 350 VCollector-Base Voltag

 8.2. Size:147K  onsemi
mje344g.pdf pdf_icon

MJE344K

MJE344GPlastic NPN SiliconMedium-Power TransistorThis device is useful for medium voltage applications requiring highfT such as converters and extended range amplifiers.Featureshttp://onsemi.com These Devices are Pb-Free and are RoHS Compliant*0.5 AMPEREPOWER TRANSISTORSMAXIMUM RATINGSNPN SILICONRating Symbol Value Unit150-200 VOLTS, 20 WATTSCollector-Emitter Volt

 8.3. Size:62K  onsemi
mje344-d.pdf pdf_icon

MJE344K

MJE344Plastic NPN SiliconMedium-Power TransistorThis device is useful for medium voltage applications requiring highfT such as converters and extended range amplifiers.Featureshttp://onsemi.com Pb-Free Package is Available*0.5 AMPEREPOWER TRANSISTORSMAXIMUM RATINGSNPN SILICONRating Symbol Value Unit150-200 VOLTS, 20 WATTS

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