MJE5730 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE5730
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar MJE5730
MJE5730 Datasheet (PDF)
mje5730 mje5731 mje5731a.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,switch-mode power supply drivers and other switching applications. www.onsemi.comFeatures1.0 AMPERE Popular TO-220 Plastic PackagePOWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 SeriesPCP SILICON These Devices ar
mje5730.pdf
isc Silicon PNP Power Transistor MJE5730DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -300V(Min)CEO(SUS)DC current gain -: h = 30~150@ I = -0.3AFE CWith TO-220 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and other sw
mje5730r.pdf
Order this documentMOTOROLAby MJE5730/DSEMICONDUCTOR TECHNICAL DATAMJE5730MJE5731High Voltage PNP Silicon PowerMJE5731ATransistors. . . designed for line operated audio output amplifier, SWITCHMODE power supplydrivers and other switching applications.1.0 AMPEREPOWER TRANSISTORS 300 V to 400 V (Min) VCEO(sus)PNP SILICON 1.0 A Rated Collector Current300
mje5730g.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T
mje5731g.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T
mje5731ag.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T
mje5731.pdf
isc Silicon PNP Power Transistor MJE5731DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -350V(Min)CEO(SUS)DC current gain -: h = 30~150@ I = -0.3AFE CWith TO-220 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and other sw
mje5731a.pdf
isc Silicon PNP Power Transistor MJE5731ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -400V(Min)CEO(SUS)DC current gain -: h = 30~150@ I = -0.3AFE CWith TO-220 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and other s
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2920A | ET4039
Liste
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