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MJE5851 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE5851
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 350 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 270 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO220
 

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MJE5851 Datasheet (PDF)

 ..1. Size:247K  onsemi
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MJE5851

MJE5850, MJE5851,MJE5852Switch-mode Series PNPSilicon Power TransistorsThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuitswww.onsemi.comwhere fall time is critical. They are particularly suited for line operatedswitch-mode applications.8 AMPEREFeaturesPCP SILICON Switching RegulatorsPOWER T

 0.1. Size:205K  onsemi
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MJE5851

MJE5850, MJE5851,MJE5852SWITCHMODE SeriesPNP Silicon PowerTransistorshttp://onsemi.comThe MJE5850, MJE5851 and the MJE5852 transistors are designedfor high-voltage, high-speed, power switching in inductive circuits8 AMPEREwhere fall time is critical. They are particularly suited for line operatedSWITCHMODE applications.PCP SILICONPOWER TRANSISTORSFeatures300-350-400

 8.1. Size:302K  motorola
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MJE5851

Order this documentMOTOROLAby MJE5850/DSEMICONDUCTOR TECHNICAL DATAMJE5850*MJE5851Designer's Data SheetMJE5852*SWITCHMODE Series*Motorola Preferred DevicePNP Silicon Power Transistors8 AMPEREThe MJE5850, MJE5851 and the MJE5852 transistors are designed for highvolt-PNP SILICONage, highspeed, power switching in inductive circuits where fall time is critic

 8.2. Size:58K  st
mje5852.pdf pdf_icon

MJE5851

MJE5852HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITYAPPLICATIONS: SWITCHING REGULATORS MOTOR CONTROL INVERTERS 321DESCRIPTION The MJE5852 is manufactured using HighTO-220Voltage PNP Multi-Epitaxial technology for highswitching speed and high voltage capability.It is intended for use in hi

Otros transistores... MJE5730 , MJE5731 , MJE5731A , MJE5732 , MJE5740 , MJE5741 , MJE5742 , MJE5850 , TIP32C , MJE5852 , MJE5974 , MJE5975 , MJE5976 , MJE5977 , MJE5978 , MJE5979 , MJE5980 .

History: BP8-12 | 2SB539A | MP501A | 2SB362 | LMUN2212LT1G | BCW66G | BDX95

 

 
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