MJE701T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJE701T
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar MJE701T

MJE701T Datasheet (PDF)

..1. Size:215K inchange semiconductor
mje701t.pdf

isc Silicon PNP Darlington Power Transistor MJE701TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE C= 100(Min) @ I = -4ACComplement to Type MJE801TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

8.1. Size:211K inchange semiconductor
mje701.pdf

isc Silicon PNP Darlington Power Transistor MJE701DESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE C= 100(Min) @ I = -4ACComplement to Type MJE801Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

9.1. Size:256K motorola
mje700re.pdf

Order this documentMOTOROLAby MJE700/DSEMICONDUCTOR TECHNICAL DATAPNPMJE700,TPlastic DarlingtonComplementary Silicon PowerMJE702TransistorsMJE703. . . designed for generalpurpose amplifier and lowspeed switching applications.NPN High DC Current Gain MJE800,ThFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Builtin BaseEmitter Resis

9.2. Size:51K fairchild semi
mje700.pdf

MJE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSym- UnitParameter Valuebol s VCB

9.3. Size:126K onsemi
mje703g.pdf

MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit

9.4. Size:126K onsemi
mje700g.pdf

9.5. Size:126K onsemi
mje702g.pdf

9.6. Size:228K inchange semiconductor
mje700.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700 DESCRIPTION CollectorEmitter Breakdown Voltage : V(BR)CEO =-60 V DC Current Gain : hFE = 750(Min) @ IC=-1.5 A Complement to Type MJE800 APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25

9.7. Size:235K inchange semiconductor
mje702t.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE702T DESCRIPTION CollectorEmitter Breakdown Voltage : V(BR)CEO =-80 V DC Current Gain : hFE = 750(Min) @ IC=-2A Complement to Type MJE802T APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25)

9.8. Size:215K inchange semiconductor
mje703t.pdf

isc Silicon PNP Darlington Power Transistor MJE703TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = -80 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE C= 100(Min) @ I = -4ACComplement to Type MJE803TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

9.9. Size:213K inchange semiconductor
mje703.pdf

isc Silicon PNP Darlington Power Transistor MJE703DESCRIPTIONCollectorEmitter Breakdown Voltage: V = -80 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE C= 100(Min) @ I = -4ACComplement to Type MJE803Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

9.10. Size:215K inchange semiconductor
mje700t.pdf

isc Silicon PNP Darlington Power Transistor MJE700TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60 V(BR)CEODC Current Gain: h = 750(Min) @ I = -1.5 AFE C= 100(Min) @ I = -4ACComplement to Type MJE800TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-spe

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