MJE702T Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE702T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 100
Encapsulados: TO220
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MJE702T datasheet
..1. Size:235K inchange semiconductor
mje702t.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE702T DESCRIPTION Collector Emitter Breakdown Voltage V(BR)CEO =-80 V DC Current Gain hFE = 750(Min) @ IC=-2A Complement to Type MJE802T APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )
8.1. Size:126K onsemi
mje702g.pdf
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit
9.1. Size:256K motorola
mje700re.pdf
Order this document MOTOROLA by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors MJE703 . . . designed for general purpose amplifier and low speed switching applications. NPN High DC Current Gain MJE800,T hFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Built in Base Emitter Resis
9.2. Size:51K fairchild semi
mje700.pdf
MJE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Sym- Unit Parameter Value bol s VCB
9.3. Size:126K onsemi
mje703g.pdf
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit
9.4. Size:126K onsemi
mje700g.pdf
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit
9.5. Size:228K inchange semiconductor
mje700.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700 DESCRIPTION Collector Emitter Breakdown Voltage V(BR)CEO =-60 V DC Current Gain hFE = 750(Min) @ IC=-1.5 A Complement to Type MJE800 APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25
9.6. Size:211K inchange semiconductor
mje701.pdf
isc Silicon PNP Darlington Power Transistor MJE701 DESCRIPTION Collector Emitter Breakdown Voltage V = -60 V (BR)CEO DC Current Gain h = 750(Min) @ I = -2 A FE C = 100(Min) @ I = -4A C Complement to Type MJE801 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed
9.7. Size:215K inchange semiconductor
mje703t.pdf
isc Silicon PNP Darlington Power Transistor MJE703T DESCRIPTION Collector Emitter Breakdown Voltage V = -80 V (BR)CEO DC Current Gain h = 750(Min) @ I = -2 A FE C = 100(Min) @ I = -4A C Complement to Type MJE803T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed
9.8. Size:215K inchange semiconductor
mje701t.pdf
isc Silicon PNP Darlington Power Transistor MJE701T DESCRIPTION Collector Emitter Breakdown Voltage V = -60 V (BR)CEO DC Current Gain h = 750(Min) @ I = -2 A FE C = 100(Min) @ I = -4A C Complement to Type MJE801T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed
9.9. Size:213K inchange semiconductor
mje703.pdf
isc Silicon PNP Darlington Power Transistor MJE703 DESCRIPTION Collector Emitter Breakdown Voltage V = -80 V (BR)CEO DC Current Gain h = 750(Min) @ I = -2 A FE C = 100(Min) @ I = -4A C Complement to Type MJE803 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed
9.10. Size:215K inchange semiconductor
mje700t.pdf
isc Silicon PNP Darlington Power Transistor MJE700T DESCRIPTION Collector Emitter Breakdown Voltage V = -60 V (BR)CEO DC Current Gain h = 750(Min) @ I = -1.5 A FE C = 100(Min) @ I = -4A C Complement to Type MJE800T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-spe
Otros transistores... MJE6043, MJE6044, MJE6045, MJE700, MJE700T, MJE701, MJE701T, MJE702, TIP41, MJE703, MJE703T, MJE710, MJE711, MJE712, MJE720, MJE721, MJE722
