MJE703 Todos los transistores

 ..1. Size:213K  inchange semiconductor
 mje703.pdf

isc Silicon PNP Darlington Power Transistor MJE703 DESCRIPTION Collector Emitter Breakdown Voltage V = -80 V (BR)CEO DC Current Gain h = 750(Min) @ I = -2 A FE C = 100(Min) @ I = -4A C Complement to Type MJE803 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed

 0.1. Size:126K  onsemi
 mje703g.pdf

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

 0.2. Size:215K  inchange semiconductor
 mje703t.pdf

isc Silicon PNP Darlington Power Transistor MJE703T DESCRIPTION Collector Emitter Breakdown Voltage V = -80 V (BR)CEO DC Current Gain h = 750(Min) @ I = -2 A FE C = 100(Min) @ I = -4A C Complement to Type MJE803T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed

 9.1. Size:256K  motorola
 mje700re.pdf

Order this document MOTOROLA by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors MJE703 . . . designed for general purpose amplifier and low speed switching applications. NPN High DC Current Gain MJE800,T hFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Built in Base Emitter Resis

 9.2. Size:51K  fairchild semi
 mje700.pdf

MJE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Sym- Unit Parameter Value bol s VCB

 9.3. Size:126K  onsemi
 mje700g.pdf

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

 9.4. Size:126K  onsemi
 mje702g.pdf

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

 9.5. Size:228K  inchange semiconductor
 mje700.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700 DESCRIPTION Collector Emitter Breakdown Voltage V(BR)CEO =-60 V DC Current Gain hFE = 750(Min) @ IC=-1.5 A Complement to Type MJE800 APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25

 9.6. Size:235K  inchange semiconductor
 mje702t.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE702T DESCRIPTION Collector Emitter Breakdown Voltage V(BR)CEO =-80 V DC Current Gain hFE = 750(Min) @ IC=-2A Complement to Type MJE802T APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )

 9.7. Size:211K  inchange semiconductor
 mje701.pdf

isc Silicon PNP Darlington Power Transistor MJE701 DESCRIPTION Collector Emitter Breakdown Voltage V = -60 V (BR)CEO DC Current Gain h = 750(Min) @ I = -2 A FE C = 100(Min) @ I = -4A C Complement to Type MJE801 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed

 9.8. Size:215K  inchange semiconductor
 mje701t.pdf

isc Silicon PNP Darlington Power Transistor MJE701T DESCRIPTION Collector Emitter Breakdown Voltage V = -60 V (BR)CEO DC Current Gain h = 750(Min) @ I = -2 A FE C = 100(Min) @ I = -4A C Complement to Type MJE801T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed

 9.9. Size:215K  inchange semiconductor
 mje700t.pdf

isc Silicon PNP Darlington Power Transistor MJE700T DESCRIPTION Collector Emitter Breakdown Voltage V = -60 V (BR)CEO DC Current Gain h = 750(Min) @ I = -1.5 A FE C = 100(Min) @ I = -4A C Complement to Type MJE800T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-spe