MJE801T Todos los transistores

 ..1. Size:212K  inchange semiconductor
 mje801t.pdf

isc Silicon NPN Darlington Power Transistor MJE801T DESCRIPTION Collector Emitter Breakdown Voltage V = 60 V (BR)CEO DC Current Gain h = 750(Min) @ I = 2A FE C = 100(Min) @ I = 4A C Complement to Type MJE701T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed sw

 8.1. Size:212K  inchange semiconductor
 mje801.pdf

isc Silicon NPN Darlington Power Transistor MJE801 DESCRIPTION Collector Emitter Breakdown Voltage V = 60 V (BR)CEO DC Current Gain h = 750(Min) @ I = 2A FE C = 100(Min) @ I = 4A C Complement to Type MJE701 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed swit

 8.2. Size:118K  inchange semiconductor
 mje800 mje801 mje802 mje803.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE800/801/802/803 DESCRIPTION With TO-126 package Complement to type MJE700/701/702/703 High DC current gain DARLINGTON APPLICATIONS Designed for general purpose amplifier and low speed switching applications PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to

 9.1. Size:64K  st
 mje802 mje803.pdf

MJE802 MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE M

 9.2. Size:51K  fairchild semi
 mje800.pdf

MJE800/801/802/803 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Coll

 9.3. Size:126K  onsemi
 mje800g.pdf

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

 9.4. Size:126K  onsemi
 mje803g.pdf

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

 9.5. Size:126K  onsemi
 mje802g.pdf

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

 9.6. Size:214K  inchange semiconductor
 mje802.pdf

isc Silicon NPN Darlington Power Transistor MJE802 DESCRIPTION Collector Emitter Breakdown Voltage V = 80 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5A FE C = 100(Min) @ I = 4A C Complement to Type MJE702 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed sw

 9.7. Size:212K  inchange semiconductor
 mje800t.pdf

isc Silicon NPN Darlington Power Transistor MJE800T DESCRIPTION Collector Emitter Breakdown Voltage V = 60 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5A FE C = 100(Min) @ I = 4A C Complement to Type MJE700T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed

 9.8. Size:214K  inchange semiconductor
 mje803.pdf

isc Silicon NPN Darlington Power Transistor MJE803 DESCRIPTION Collector Emitter Breakdown Voltage V = 80 V (BR)CEO DC Current Gain h = 750(Min) @ I = 2A FE C = 100(Min) @ I = 4A C Complement to Type MJE703 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed swit

 9.9. Size:212K  inchange semiconductor
 mje802t.pdf

isc Silicon NPN Darlington Power Transistor MJE802T DESCRIPTION Collector Emitter Breakdown Voltage V = 80 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5A FE C = 100(Min) @ I = 4A C Complement to Type MJE702T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed

 9.10. Size:212K  inchange semiconductor
 mje803t.pdf

isc Silicon NPN Darlington Power Transistor MJE803T DESCRIPTION Collector Emitter Breakdown Voltage V = 80 V (BR)CEO DC Current Gain h = 750(Min) @ I = 2A FE C = 100(Min) @ I = 4A C Complement to Type MJE703T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed sw

 9.11. Size:214K  inchange semiconductor
 mje800.pdf

isc Silicon NPN Darlington Power Transistor MJE800 DESCRIPTION Collector Emitter Breakdown Voltage V = 60 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5 A FE C = 100(Min) @ I = 4A C Complement to Type MJE700 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed s