MJE801T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJE801T
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO220

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MJE801T Datasheet (PDF)

..1. Size:212K inchange semiconductor
mje801t.pdf

isc Silicon NPN Darlington Power Transistor MJE801TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE701TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw

8.1. Size:212K inchange semiconductor
mje801.pdf

isc Silicon NPN Darlington Power Transistor MJE801DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE701Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswit

8.2. Size:118K inchange semiconductor
mje800 mje801 mje802 mje803.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE800/801/802/803 DESCRIPTION With TO-126 package Complement to type MJE700/701/702/703 High DC current gain DARLINGTON APPLICATIONS Designed for generalpurpose amplifier and lowspeed switching applications PINNING (see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to

9.1. Size:64K st
mje802 mje803.pdf

MJE802MJE803SILICON NPN POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The MJE802 and MJE803 are siliconepitaxial-base NPN transistors in monolithicDarlington configuration and are mounted inJedec SOT-32 plastic package.They are intendedfor use in medium power linear and switchingapplications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE M

9.2. Size:51K fairchild semi
mje800.pdf

MJE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Units VCBO Coll

9.3. Size:126K onsemi
mje800g.pdf

MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit

9.4. Size:126K onsemi
mje803g.pdf

9.5. Size:126K onsemi
mje802g.pdf

9.6. Size:214K inchange semiconductor
mje802.pdf

isc Silicon NPN Darlington Power Transistor MJE802DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5AFE C= 100(Min) @ I = 4ACComplement to Type MJE702Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw

9.7. Size:212K inchange semiconductor
mje800t.pdf

isc Silicon NPN Darlington Power Transistor MJE800TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5AFE C= 100(Min) @ I = 4ACComplement to Type MJE700TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

9.8. Size:214K inchange semiconductor
mje803.pdf

isc Silicon NPN Darlington Power Transistor MJE803DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE703Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswit

9.9. Size:212K inchange semiconductor
mje802t.pdf

isc Silicon NPN Darlington Power Transistor MJE802TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5AFE C= 100(Min) @ I = 4ACComplement to Type MJE702TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

9.10. Size:212K inchange semiconductor
mje803t.pdf

isc Silicon NPN Darlington Power Transistor MJE803TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE703TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw

9.11. Size:214K inchange semiconductor
mje800.pdf

isc Silicon NPN Darlington Power Transistor MJE800DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5 AFE C= 100(Min) @ I = 4ACComplement to Type MJE700Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speeds

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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