MJE802 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJE802MJE803SILICON NPN POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The MJE802 and MJE803 are siliconepitaxial-base NPN transistors in monolithicDarlington configuration and are mounted inJedec SOT-32 plastic package.They are intendedfor use in medium power linear and switchingapplications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE M

isc Silicon NPN Darlington Power Transistor MJE802DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5AFE C= 100(Min) @ I = 4ACComplement to Type MJE702Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE800/801/802/803 DESCRIPTION With TO-126 package Complement to type MJE700/701/702/703 High DC current gain DARLINGTON APPLICATIONS Designed for generalpurpose amplifier and lowspeed switching applications PINNING (see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to

MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit

isc Silicon NPN Darlington Power Transistor MJE802TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5AFE C= 100(Min) @ I = 4ACComplement to Type MJE702TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

MJE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Units VCBO Coll

MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit

MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit

isc Silicon NPN Darlington Power Transistor MJE800TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5AFE C= 100(Min) @ I = 4ACComplement to Type MJE700TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

isc Silicon NPN Darlington Power Transistor MJE803DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE703Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswit

isc Silicon NPN Darlington Power Transistor MJE801DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE701Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswit

isc Silicon NPN Darlington Power Transistor MJE803TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE703TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw

isc Silicon NPN Darlington Power Transistor MJE801TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE701TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw

isc Silicon NPN Darlington Power Transistor MJE800DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5 AFE C= 100(Min) @ I = 4ACComplement to Type MJE700Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speeds